Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 37

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPP042N03LGHKSA1 MOSFET N-CH 30V 70A TO220-3 Infineon Technologies	8,357	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	4.5V, 10V	4.2mOhm @ 30A, 10V	Through Hole	2.2V @ 250µA	38 nC @ 10 V	30 V	±20V	3900 pF @ 15 V	-	-	PG-TO220-3-1	-	79W (Tc)	-55°C ~ 175°C (TJ)
IRFZ44VPBF MOSFET N-CH 60V 55A TO220AB Infineon Technologies	3,553	-	询价单	数据表	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55A (Tc)	10V	16.5mOhm @ 31A, 10V	Through Hole	4V @ 250µA	67 nC @ 10 V	60 V	±20V	1812 pF @ 25 V	-	-	TO-220AB	-	115W (Tc)	-55°C ~ 175°C (TJ)
IMW65R072M1HXKSA1 MOSFET 650V NCH SIC TRENCH Infineon Technologies	260	-	询价单	数据表	CoolSIC™ M1	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	26A (Tc)	18V	94mOhm @ 13.3A, 18V	Through Hole	5.7V @ 4mA	22 nC @ 18 V	650 V	+23V, -5V	744 pF @ 400 V	-	-	PG-TO247-3-41	-	96W (Tc)	-55°C ~ 150°C (TJ)
BSC094N03S G MOSFET N-CH 30V 14.6A/35A TDSON Infineon Technologies	6,695	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	14.6A (Ta), 35A (Tc)	4.5V, 10V	9.4mOhm @ 35A, 10V	Surface Mount	2V @ 25µA	14 nC @ 5 V	30 V	±20V	1800 pF @ 15 V	-	-	PG-TDSON-8-1	-	2.8W (Ta), 52W (Tc)	-55°C ~ 150°C (TJ)
IPP65R050CFD7AAKSA1 MOSFET N-CH 650V 45A TO220-3 Infineon Technologies	500	-	询价单	数据表	CoolMOS™ CFD7A	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	45A (Tc)	10V	50mOhm @ 24.8A, 10V	Through Hole	4.5V @ 1.24mA	102 nC @ 10 V	650 V	±20V	4975 pF @ 400 V	AEC-Q101	-	PG-TO220-3	Automotive	227W (Tc)	-40°C ~ 150°C (TJ)
SPB18P06P MOSFET P-CH 60V 18.7A D2PAK Infineon Technologies	4,813	-	询价单	数据表	SIPMOS®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	18.7A (Ta)	10V	130mOhm @ 13.2A, 10V	Surface Mount	4V @ 1mA	28 nC @ 10 V	60 V	±20V	860 pF @ 25 V	-	-	PG-TO263-3	-	81.1W (Ta)	-55°C ~ 175°C (TJ)
IPDD60R050G7XTMA1 MOSFET N-CH 600V 47A HDSOP-10 Infineon Technologies	3,215	-	询价单	数据表	CoolMOS™ G7	10-PowerSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	47A (Tc)	10V	50mOhm @ 15.9A, 10V	Surface Mount	4V @ 800µA	68 nC @ 10 V	600 V	±20V	2670 pF @ 400 V	-	-	PG-HDSOP-10-1	-	278W (Tc)	-55°C ~ 150°C (TJ)
BSC072N025S G MOSFET N-CH 25V 15A/40A TDSON Infineon Technologies	6,776	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	15A (Ta), 40A (Tc)	4.5V, 10V	7.2mOhm @ 40A, 10V	Surface Mount	2V @ 30µA	18 nC @ 5 V	25 V	±20V	2230 pF @ 15 V	-	-	PG-TDSON-8-1	-	2.8W (Ta), 60W (Tc)	-55°C ~ 150°C (TJ)
IRFR3303TRR MOSFET N-CH 30V 33A DPAK Infineon Technologies	3,184	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	33A (Tc)	10V	31mOhm @ 18A, 10V	Surface Mount	4V @ 250µA	29 nC @ 10 V	30 V	±20V	750 pF @ 25 V	-	-	TO-252AA (DPAK)	-	57W (Tc)	-55°C ~ 150°C (TJ)
BUZ73L MOSFET N-CH 200V 7A TO220-3 Infineon Technologies	8,150	-	询价单	数据表	SIPMOS®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	5V	400mOhm @ 3.5A, 5V	Through Hole	2V @ 1mA	-	200 V	±20V	840 pF @ 25 V	-	-	PG-TO220-3	-	40W (Tc)	-55°C ~ 150°C (TJ)

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