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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFP4668PBFXKMA1TRENCH >=100V PG-TO247-3 Infineon Technologies |
396 | - |
|
数据表 |
HEXFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 130A (Tc) | 10V | 9.7mOhm @ 81A, 10V | Through Hole | 5V @ 250µA | 241 nC @ 10 V | 200 V | ±30V | 10720 pF @ 50 V | - | - | TO-247AC | - | 520W | -55°C ~ 175°C (TJ) |
|
IPL60R065C7AUMA1MOSFET HIGH POWER_NEW Infineon Technologies |
5,100 | - |
|
数据表 |
CoolMOS™ C7 | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 29A (Tc) | 10V | 65mOhm @ 15.9A, 10V | Surface Mount | 4V @ 800µA | 68 nC @ 10 V | 600 V | ±20V | 2850 pF @ 400 V | - | - | PG-VSON-4-1 | - | 180W (Tc) | -40°C ~ 150°C (TJ) |
|
IRLMS2002GTRPBFMOSFET N-CH 20V 6.5A MICRO6 Infineon Technologies |
3,238 | - |
|
数据表 |
HEXFET® | SOT-23-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6.5A (Ta) | 2.5V, 4.5V | 30mOhm @ 6.5A, 4.5V | Surface Mount | 1.2V @ 250µA | 22 nC @ 5 V | 20 V | ±12V | 1310 pF @ 15 V | - | - | Micro6™(SOT23-6) | - | 2W (Ta) | -55°C ~ 150°C (TJ) |
|
IPDD60R045CFD7XTMA1MOSFET N-CH 600V 61A HDSOP-10 Infineon Technologies |
1,680 | - |
|
数据表 |
CoolMOS™ CFD7 | 10-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 61A (Tc) | - | 45mOhm @ 18A, 10V | Surface Mount | 4.5V @ 900µA | 79 nC @ 10 V | 600 V | ±20V | 3194 pF @ 400 V | - | - | PG-HDSOP-10-1 | - | 379W (Tc) | -55°C ~ 150°C (TJ) |
|
IPZ65R065C7XKSA1MOSFET N-CH 650V 33A TO247-4 Infineon Technologies |
145 | - |
|
数据表 |
CoolMOS™ C7 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 33A (Tc) | 10V | 65mOhm @ 17.1A, 10V | Through Hole | 4V @ 850µA | 64 nC @ 10 V | 650 V | ±20V | 3020 pF @ 400 V | - | - | PG-TO247-4 | - | 171W (Tc) | -55°C ~ 150°C (TJ) |
|
IPP65R041CFD7XKSA1650V FET COOLMOS TO247 Infineon Technologies |
489 | - |
|
数据表 |
CoolMOS™ CFD7 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 10V | 41mOhm @ 24.8A, 10V | Through Hole | 4.5V @ 1.24mA | 102 nC @ 10 V | 650 V | ±20V | 4975 pF @ 400 V | - | - | PG-TO220-3-1 | - | 227W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IMBG65R072M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies |
817 | - |
|
数据表 |
CoolSIC™ M1 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 33A (Tc) | 18V | 94mOhm @ 13.3A, 18V | Surface Mount | 5.7V @ 4mA | 22 nC @ 18 V | 650 V | +23V, -5V | 744 pF @ 400 V | - | - | PG-TO263-7-12 | - | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFR9024NTRRMOSFET P-CH 55V 11A DPAK Infineon Technologies |
7,339 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 175mOhm @ 6.6A, 10V | Surface Mount | 4V @ 250µA | 19 nC @ 10 V | 55 V | ±20V | 350 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 38W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IRFR15N20DTRRPMOSFET N-CH 200V 17A DPAK Infineon Technologies |
3,064 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | 10V | 165mOhm @ 10A, 10V | Surface Mount | 5.5V @ 250µA | 41 nC @ 10 V | 200 V | ±30V | 910 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 3W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF5805MOSFET P-CH 30V 3.8A MICRO6 Infineon Technologies |
2,688 | - |
|
数据表 |
HEXFET® | SOT-23-6 Thin, TSOT-23-6 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 3.8A (Ta) | 4.5V, 10V | 98mOhm @ 3.8A, 10V | Surface Mount | 2.5V @ 250µA | 17 nC @ 10 V | 30 V | ±20V | 511 pF @ 25 V | - | - | Micro6™(TSOP-6) | - | 2W (Ta) | - |
