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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPAN60R800CEXKSA1MOSFET N-CH 600V 8.4A TO220 Infineon Technologies |
4,722 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 8.4A (Tc) | 10V | 800mOhm @ 2A, 10V | Through Hole | 3.5V @ 170µA | 17.2 nC @ 10 V | 600 V | ±20V | 373 pF @ 100 V | - | - | PG-TO220-FP | - | 27W (Tc) | -40°C ~ 150°C (TJ) |
|
IPT60R040S7XTMA1MOSFET N-CH 600V 13A 8HSOF Infineon Technologies |
1,965 | - |
|
数据表 |
CoolMOS™S7 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 12V | 40mOhm @ 13A, 12V | Surface Mount | 4.5V @ 790µA | 83 nC @ 12 V | 600 V | ±20V | 3127 pF @ 300 V | - | - | PG-HSOF-8-2 | - | 245W (Tc) | -55°C ~ 150°C (TJ) |
|
IPW65R110CFDAFKSA1MOSFET N-CH 650V 31.2A TO247-3 Infineon Technologies |
236 | - |
|
数据表 |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | Through Hole | 4.5V @ 1.3mA | 118 nC @ 10 V | 650 V | ±20V | 3240 pF @ 100 V | AEC-Q101 | - | PG-TO247-3 | Automotive | 277.8W (Tc) | -40°C ~ 150°C (TJ) |
|
IPF06N03LA GMOSFET N-CH 25V 50A TO252-3 Infineon Technologies |
7,271 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 5.7mOhm @ 30A, 10V | Surface Mount | 2V @ 40µA | 22 nC @ 5 V | 25 V | ±20V | 2653 pF @ 15 V | - | - | PG-TO252-3-23 | - | 83W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPFH6N03LA GMOSFET N-CH 25V 50A TO252-3 Infineon Technologies |
7,888 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 6.2mOhm @ 50A, 10V | Surface Mount | 2V @ 30µA | 19 nC @ 5 V | 25 V | ±20V | 2390 pF @ 15 V | - | - | PG-TO252-3-23 | - | 71W (Tc) | -55°C ~ 175°C (TJ) |
|
SPP02N60C3HKSA1MOSFET N-CH 650V 1.8A TO220-3 Infineon Technologies |
2,712 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | Through Hole | 3.9V @ 80µA | 12.5 nC @ 10 V | 650 V | ±20V | 200 pF @ 25 V | - | - | PG-TO220-3-1 | - | 25W (Tc) | -55°C ~ 150°C (TJ) |
|
IPB065N03LGATMA1MOSFET N-CH 30V 50A D2PAK Infineon Technologies |
6,239 | - |
|
数据表 |
OptiMOS™ 3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 6.5mOhm @ 30A, 10V | Surface Mount | 2.2V @ 250µA | 23 nC @ 10 V | 30 V | ±20V | 2400 pF @ 15 V | - | - | PG-TO263-3 | - | 56W (Tc) | -55°C ~ 175°C (TJ) |
|
|
BUZ73E3046XKMOSFET N-CH 200V 7A TO220-3 Infineon Technologies |
5,288 | - |
|
数据表 |
SIPMOS® | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 10V | 400mOhm @ 4.5A, 10V | Through Hole | 4V @ 1mA | - | 200 V | ±20V | 530 pF @ 25 V | - | - | PG-TO220-3 | - | 40W (Tc) | -55°C ~ 150°C (TJ) |
|
|
BUZ73AE3046XKMOSFET N-CH 200V 5.5A TO220-3 Infineon Technologies |
9,760 | - |
|
数据表 |
SIPMOS® | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 5.5A (Tc) | 10V | 600mOhm @ 4.5A, 10V | Through Hole | 4V @ 1mA | - | 200 V | ±20V | 530 pF @ 25 V | - | - | PG-TO220-3 | - | 40W (Tc) | -55°C ~ 150°C (TJ) |
|
SPI42N03S2L-13MOSFET N-CH 30V 42A TO262-3 Infineon Technologies |
7,123 | - |
|
数据表 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 4.5V, 10V | 12.9mOhm @ 21A, 10V | Through Hole | 2V @ 37µA | 30.5 nC @ 10 V | 30 V | ±20V | 1130 pF @ 25 V | - | - | PG-TO262-3-1 | - | 83W (Tc) | -55°C ~ 175°C (TJ) |
