| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRLZ44ZPBFMOSFET N-CH 55V 51A TO220AB Infineon Technologies |
6,878 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 51A (Tc) | 4.5V, 10V | 13.5mOhm @ 31A, 10V | Through Hole | 3V @ 250µA | 36 nC @ 5 V | 55 V | ±16V | 1620 pF @ 25 V | - | - | TO-220AB | - | 80W (Tc) | -55°C ~ 175°C (TJ) |
|
SPU02N60C3BKMA1MOSFET N-CH 650V 1.8A TO251-3 Infineon Technologies |
2,223 | - |
|
数据表 |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | Through Hole | 3.9V @ 80µA | 12.5 nC @ 10 V | 650 V | ±20V | 200 pF @ 25 V | - | - | PG-TO251-3-21 | - | 25W (Tc) | -55°C ~ 150°C (TJ) |
|
IPDD60R055CFD7XTMA1MOSFET N-CH 600V 52A HDSOP-10 Infineon Technologies |
1,385 | - |
|
数据表 |
CoolMOS™ CFD7 | 10-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 52A (Tc) | - | 55mOhm @ 15.1A, 10V | Surface Mount | 4.5V @ 760µA | 67 nC @ 10 V | 600 V | ±20V | 2724 pF @ 400 V | - | - | PG-HDSOP-10-1 | - | 329W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFH7934TRPBFMOSFET N-CH 30V 24A/76A 8PQFN Infineon Technologies |
8,961 | - |
|
数据表 |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 24A (Ta), 76A (Tc) | 4.5V, 10V | 3.5mOhm @ 24A, 10V | Surface Mount | 2.35V @ 50µA | 30 nC @ 4.5 V | 30 V | ±20V | 3100 pF @ 15 V | - | - | 8-PQFN (5x6) | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) |
|
SPD30N06S2-15MOSFET N-CH 55V 30A TO252-3 Infineon Technologies |
3,875 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 10V | 14.7mOhm @ 30A, 10V | Surface Mount | 4V @ 80µA | 52 nC @ 10 V | 55 V | ±20V | 2070 pF @ 25 V | - | - | PG-TO252-3-11 | - | 136W (Tc) | -55°C ~ 175°C (TJ) |
|
IRLML6401GTRPBFMOSFET P-CH 12V 4.3A SOT-23-3 Infineon Technologies |
8,916 | - |
|
数据表 |
HEXFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 4.3A (Ta) | 1.8V, 4.5V | 50mOhm @ 4.3A, 4.5V | Surface Mount | 950mV @ 250µA | 15 nC @ 5 V | 12 V | ±8V | 830 pF @ 10 V | - | - | Micro3™/SOT-23 | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) |
|
IRLML6402GTRPBFMOSFET P-CH 20V 3.7A SOT23 Infineon Technologies |
9,409 | - |
|
数据表 |
HEXFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 3.7A (Ta) | 2.5V, 4.5V | 65mOhm @ 3.7A, 4.5V | Surface Mount | 1.2V @ 250µA | 12 nC @ 5 V | 20 V | ±12V | 633 pF @ 10 V | - | - | Micro3™/SOT-23 | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) |
|
IPW65R099CFD7AXKSA1MOSFET N-CH 650V 24A TO247-3-41 Infineon Technologies |
186 | - |
|
数据表 |
CoolMOS™ CFD7A | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 24A (Tc) | 10V | 99mOhm @ 12.5A, 10V | Through Hole | 4.5V @ 630µA | 53 nC @ 10 V | 650 V | ±20V | 2513 pF @ 400 V | AEC-Q101 | - | PG-TO247-3-41 | Automotive | 127W (Tc) | -40°C ~ 150°C (TJ) |
|
IPT60R055CFD7XTMA1MOSFET N-CH 600V 44A 8HSOF Infineon Technologies |
1,764 | - |
|
数据表 |
CoolMOS™ CFD7 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 44A (Tc) | 10V | 55mOhm @ 15.1A, 10V | Surface Mount | 4.5V @ 760µA | 67 nC @ 10 V | 600 V | ±20V | 2721 pF @ 400 V | - | - | PG-HSOF-8-2 | - | 236W (Tc) | -55°C ~ 150°C (TJ) |
|
IPDQ60R040S7XTMA1HIGH POWER_NEW PG-HDSOP-22 Infineon Technologies |
750 | - |
|
数据表 |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 14A (Tc) | 12V | 40mOhm @ 13A, 12V | Surface Mount | 4.5V @ 790µA | 83 nC @ 12 V | 600 V | ±20V | 3127 pF @ 300 V | - | - | PG-HDSOP-22-1 | - | 272W (Tc) | -55°C ~ 150°C (TJ) |