Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 33

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRLL2703TR MOSFET N-CH 30V 3.9A SOT223 Infineon Technologies	3,457	-	询价单	数据表	HEXFET®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	3.9A (Ta)	4V, 10V	45mOhm @ 3.9A, 10V	Surface Mount	2.4V @ 250µA	14 nC @ 5 V	30 V	±16V	530 pF @ 25 V	-	-	SOT-223	-	1W (Ta)	-55°C ~ 150°C (TJ)
IRLMS1902TRPBF MOSFET N-CH 20V 3.2A MICRO6 Infineon Technologies	3,417	-	询价单	数据表	HEXFET®	SOT-23-6	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	3.2A (Ta)	2.7V, 4.5V	100mOhm @ 2.2A, 4.5V	Surface Mount	700mV @ 250µA (Min)	7 nC @ 4.5 V	20 V	±12V	300 pF @ 15 V	-	-	Micro6™(TSOP-6)	-	1.7W (Ta)	-55°C ~ 150°C (TJ)
IRLML2502GTRPBF MOSFET N-CH 20V 4.2A SOT23 Infineon Technologies	5,224	-	询价单	数据表	HEXFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.2A (Ta)	2.5V, 4.5V	45mOhm @ 4.2A, 4.5V	Surface Mount	1.2V @ 250µA	12 nC @ 5 V	20 V	±12V	740 pF @ 15 V	-	-	Micro3™/SOT-23	-	1.25W (Ta)	-55°C ~ 150°C (TJ)
IRLML5103GTRPBF MOSFET P-CH 30V 0.76A SOT-23-3 Infineon Technologies	4,037	-	询价单	数据表	HEXFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	760mA (Ta)	4.5V, 10V	600mOhm @ 600mA, 10V	Surface Mount	1V @ 250µA	5.1 nC @ 10 V	30 V	±20V	75 pF @ 25 V	-	-	Micro3™/SOT-23	-	540mW (Ta)	-55°C ~ 150°C (TJ)
IPD60R2K1CEBTMA1 MOSFET N-CH 600V 2.3A TO252-3 Infineon Technologies	6,447	-	询价单	数据表	CoolMOS™ CE	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.3A (Tc)	10V	2.1Ohm @ 760mA, 10V	Surface Mount	3.5V @ 60µA	6.7 nC @ 10 V	600 V	±20V	140 pF @ 100 V	-	-	PG-TO252-3	-	22W (Tc)	-40°C ~ 150°C (TJ)
IPZA60R080P7XKSA1 MOSFET N-CH 600V 37A TO247-4 Infineon Technologies	243	-	询价单	数据表	CoolMOS™ P7	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	37A (Tc)	10V	80mOhm @ 11.8A, 10V	Through Hole	4V @ 590µA	51 nC @ 10 V	600 V	±20V	2180 pF @ 400 V	-	-	PG-TO247-4	-	129W (Tc)	-55°C ~ 150°C (TJ)
IPT014N08NM5ATMA1 MOSFET N-CH 80V 37A/331A HSOF-8 Infineon Technologies	2,194	-	询价单	数据表	OptiMOS™ 5	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	37A (Ta), 331A (Tc)	6V, 10V	1.4mOhm @ 150A, 10V	Surface Mount	3.8V @ 280µA	200 nC @ 10 V	80 V	±20V	14000 pF @ 40 V	-	-	PG-HSOF-8-1	-	300W (Tc)	-55°C ~ 175°C (TJ)
SPP02N60S5HKSA1 MOSFET N-CH 600V 1.8A TO220-3 Infineon Technologies	4,080	-	询价单	数据表	CoolMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.8A (Tc)	10V	3Ohm @ 1.1A, 10V	Through Hole	5.5V @ 80µA	9.5 nC @ 10 V	600 V	±20V	240 pF @ 25 V	-	-	PG-TO220-3-1	-	25W (Tc)	-55°C ~ 150°C (TJ)
IRLU8113PBF MOSFET N-CH 30V 94A I-PAK Infineon Technologies	6,082	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	94A (Tc)	4.5V, 10V	6mOhm @ 15A, 10V	Through Hole	2.25V @ 250µA	32 nC @ 4.5 V	30 V	±20V	2920 pF @ 15 V	-	-	IPAK	-	89W (Tc)	-55°C ~ 175°C (TJ)
IPA60R360P7SE8228XKSA1 MOSFET N-CH 600V 9A TO220 Infineon Technologies	3,412	-	询价单	数据表	CoolMOS™ P7	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	10V	360mOhm @ 2.7A, 10V	Through Hole	4V @ 140µA	13 nC @ 10 V	600 V	±20V	555 pF @ 400 V	-	-	PG-TO220-FP	-	22W (Tc)	-40°C ~ 150°C (TJ)

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