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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRFR2407TRRPBF

IRFR2407TRRPBF

MOSFET N-CH 75V 42A DPAK

Infineon Technologies

2,698 -
IRFR2407TRRPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 42A (Tc) 10V 26mOhm @ 25A, 10V Surface Mount 4V @ 250µA 110 nC @ 10 V 75 V ±20V 2400 pF @ 25 V - - TO-252AA (DPAK) - 110W (Tc) -55°C ~ 175°C (TJ)
SPN03N60S5

SPN03N60S5

MOSFET N-CH 600V 700MA SOT223-4

Infineon Technologies

2,618 -
SPN03N60S5

数据表

CoolMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 700mA (Ta) 10V 1.4Ohm @ 2A, 10V Surface Mount 5.5V @ 135µA 12.8 nC @ 10 V 600 V ±20V 440 pF @ 25 V - - PG-SOT223-4 - 1.8W (Ta) -55°C ~ 150°C (TJ)
IRFR3504TRLPBF

IRFR3504TRLPBF

MOSFET N-CH 40V 30A DPAK

Infineon Technologies

7,660 -
IRFR3504TRLPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 9.2mOhm @ 30A, 10V Surface Mount 4V @ 250µA 71 nC @ 10 V 40 V ±20V 2150 pF @ 25 V - - TO-252AA (DPAK) - 140W (Tc) -55°C ~ 175°C (TJ)
IRFR3504TRRPBF

IRFR3504TRRPBF

MOSFET N-CH 40V 30A DPAK

Infineon Technologies

4,191 -
IRFR3504TRRPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 9.2mOhm @ 30A, 10V Surface Mount 4V @ 250µA 71 nC @ 10 V 40 V ±20V 2150 pF @ 25 V - - TO-252AA (DPAK) - 140W (Tc) -55°C ~ 175°C (TJ)
IPTG054N15NM5ATMA1

IPTG054N15NM5ATMA1

TRENCH >=100V

Infineon Technologies

1,690 -
IPTG054N15NM5ATMA1

数据表

OptiMOS™ 5 8-PowerSMD, Gull Wing Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17.5A (Ta), 143A (Tc) 8V, 10V 5.4mOhm @ 50A, 10V Surface Mount 4.6V @ 191µA 73 nC @ 10 V 150 V ±20V 5700 pF @ 75 V - - PG-HSOG-8 - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ)
BSC106N025S G

BSC106N025S G

MOSFET N-CH 25V 13A/30A TDSON

Infineon Technologies

4,666 -
BSC106N025S G

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 13A (Ta), 30A (Tc) 4.5V, 10V 10.6mOhm @ 30A, 10V Surface Mount 2V @ 20µA 11 nC @ 5 V 25 V ±20V 1370 pF @ 15 V - - PG-TDSON-8-1 - 2.8W (Ta), 43W (Tc) -55°C ~ 150°C (TJ)
IST015N06NM5AUMA1

IST015N06NM5AUMA1

OPTIMOS 5 POWER MOSFET 60 V

Infineon Technologies

1,081 -
IST015N06NM5AUMA1

数据表

OptiMOS™ 5 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 36A (Ta), 242A (Tc) 6V, 10V 1.5mOhm @ 50A, 10V Surface Mount 3.3V @ 95µA 89 nC @ 10 V 60 V ±20V 5200 pF @ 30 V - - PG-HSOF-5-1 - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ)
AUIRFB8407

AUIRFB8407

MOSFET N-CH 40V 195A TO220AB

Infineon Technologies

1,000 -
AUIRFB8407

数据表

HEXFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 195A (Tc) 10V 2mOhm @ 100A, 10V Through Hole 4V @ 150µA 225 nC @ 10 V 40 V ±20V 7330 pF @ 25 V - - TO-220AB - 230W (Tc) -55°C ~ 175°C (TJ)
IPD65R950C6ATMA1

IPD65R950C6ATMA1

MOSFET N-CH 650V 4.5A TO252-3

Infineon Technologies

2,856 -
IPD65R950C6ATMA1

数据表

CoolMOS™ C6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 950mOhm @ 1.5A, 10V Surface Mount 3.5V @ 200µA 15.3 nC @ 10 V 650 V ±20V 328 pF @ 100 V - - PG-TO252-3 - 37W (Tc) -55°C ~ 150°C (TJ)
IPB09N03LAT

IPB09N03LAT

MOSFET N-CH 25V 50A TO263-3

Infineon Technologies

7,449 -
IPB09N03LAT

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 8.9mOhm @ 30A, 10V Surface Mount 2V @ 20µA 13 nC @ 5 V 25 V ±20V 1642 pF @ 15 V - - PG-TO263-3-2 - 63W (Tc) -55°C ~ 175°C (TJ)
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