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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPF012N06NF2SATMA1

IPF012N06NF2SATMA1

TRENCH 40<-<100V

Infineon Technologies

245 -
IPF012N06NF2SATMA1

数据表

StrongIRFET™2 TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 41A (Ta), 282A (Tc) 6V, 10V 1.2mOhm @ 100A, 10V Surface Mount 3.3V @ 186µA 233 nC @ 10 V 60 V ±20V 10500 pF @ 30 V - - PG-TO263-7-U02 - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ)
IPL65R160CFD7AUMA1

IPL65R160CFD7AUMA1

COOLMOS CFD7 SUPERJUNCTION MOSFE

Infineon Technologies

2,650 -
IPL65R160CFD7AUMA1

数据表

CoolMOS™ 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 160mOhm @ 6.4A, 10V Surface Mount 4.5V @ 320µA 28 nC @ 10 V 650 V ±20V 1283 pF @ 400 V - - PG-VSON-4 - 98W (Tc) -55°C ~ 150°C (TJ)
IPBE65R190CFD7AATMA1

IPBE65R190CFD7AATMA1

MOSFET N-CH 650V 14A TO263-7

Infineon Technologies

5,785 -
IPBE65R190CFD7AATMA1

数据表

CoolMOS™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14A (Tc) - 190mOhm @ 6.4A, 10V Surface Mount 4.5V @ 320µA 7 nC @ 10 V 650 V ±20V 1291 pF @ 400 V AEC-Q101 - PG-TO263-7-11 Automotive 77W (Tc) -40°C ~ 150°C (TJ)
IRLR3802TRLPBF

IRLR3802TRLPBF

MOSFET N-CH 12V 84A DPAK

Infineon Technologies

8,896 -
IRLR3802TRLPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 84A (Tc) 2.8V, 4.5V 8.5mOhm @ 15A, 4.5V Surface Mount 1.9V @ 250µA 41 nC @ 5 V 12 V ±12V 2490 pF @ 6 V - - TO-252AA (DPAK) - 88W (Tc) -55°C ~ 175°C (TJ)
IPU039N03LGXK

IPU039N03LGXK

MOSFET N-CH 30V 50A TO251-3

Infineon Technologies

9,952 -
IPU039N03LGXK

数据表

OptiMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 3.9mOhm @ 30A, 10V Through Hole 2.2V @ 250µA 51 nC @ 10 V 30 V ±20V 5300 pF @ 15 V - - PG-TO251-3-21 - 94W (Tc) -55°C ~ 175°C (TJ)
SPD22N08S2L-50

SPD22N08S2L-50

MOSFET N-CH 75V 25A TO252-3

Infineon Technologies

7,366 -
SPD22N08S2L-50

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25A (Tc) 4.5V, 10V 50mOhm @ 11A, 10V Surface Mount 2V @ 31µA 33 nC @ 10 V 75 V ±20V 850 pF @ 25 V - - PG-TO252-3-11 - 75W (Tc) -55°C ~ 175°C (TJ)
SPD30N06S2L-23

SPD30N06S2L-23

MOSFET N-CH 55V 30A TO252-3

Infineon Technologies

9,376 -
SPD30N06S2L-23

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 23mOhm @ 22A, 10V Surface Mount 2V @ 50µA 42 nC @ 10 V 55 V ±20V 1390 pF @ 25 V - - PG-TO252-3-11 - 100W (Tc) -55°C ~ 175°C (TJ)
IAUW162N04S4LX7SA1

IAUW162N04S4LX7SA1

MOSFET

Infineon Technologies

7,841 -
IAUW162N04S4LX7SA1

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IPP80N06S207AKSA3

IPP80N06S207AKSA3

MOSFET

Infineon Technologies

9,639 -
IPP80N06S207AKSA3

数据表

OptiMOS™ TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 6.6mOhm @ 68A, 10V Through Hole 4V @ 180µA 110 nC @ 10 V 55 V ±20V 3400 pF @ 25 V AEC-Q101 - PG-TO220-3-1 Automotive 250W (Tc) -55°C ~ 175°C (TJ)
IIPC20S4N04X2SA2

IIPC20S4N04X2SA2

MOSFET

Infineon Technologies

6,672 -
IIPC20S4N04X2SA2

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
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