Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 23

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRF6100 MOSFET P-CH 20V 5.1A 4FLIPFET Infineon Technologies	4,825	-	询价单	数据表	HEXFET®	4-FlipFet™	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	5.1A (Ta)	2.5V, 4.5V	65mOhm @ 5.1A, 4.5V	Surface Mount	1.2V @ 250µA	21 nC @ 5 V	20 V	±12V	1230 pF @ 15 V	-	-	4-FlipFet™	-	2.2W (Ta)	-55°C ~ 150°C (TJ)
IRF7807TR MOSFET N-CH 30V 8.3A 8SO Infineon Technologies	8,833	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	8.3A (Ta)	4.5V	25mOhm @ 7A, 4.5V	Surface Mount	1V @ 250µA	17 nC @ 5 V	30 V	±12V	-	-	-	8-SOIC	-	2.5W (Ta)	-55°C ~ 155°C (TJ)
IPF009N04NF2SATMA1 TRENCH <= 40V Infineon Technologies	650	-	询价单	数据表	StrongIRFET™2	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	49A (Ta), 302A (Tc)	6V, 10V	0.9mOhm @ 100A, 10V	Surface Mount	3.4V @ 249µA	315 nC @ 10 V	40 V	±20V	15000 pF @ 20 V	-	-	PG-TO263-7-U02	-	3.8W (Ta), 375W (Tc)	-55°C ~ 175°C (TJ)
IPP60R125CFD7XKSA1 MOSFET N-CH 600V 18A TO220-3 Infineon Technologies	287	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	125mOhm @ 7.8A, 10V	Through Hole	4.5V @ 390µA	36 nC @ 10 V	600 V	±20V	1503 pF @ 400 V	-	-	PG-TO220-3	-	92W (Tc)	-55°C ~ 150°C (TJ)
IPT022N10NF2SATMA1 MOSFET Infineon Technologies	1,800	-	询价单	数据表	StrongIRFET™ 2	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	29A (Ta), 236A (Tc)	6V, 10V	2.25mOhm @ 150A, 10V	Surface Mount	3.8V @ 169µA	155 nC @ 10 V	100 V	±20V	7300 pF @ 50 V	-	-	PG-HSOF-8-10	-	3.8W (Ta), 250W (Tc)	-55°C ~ 175°C (TJ)
IRLU3714ZPBF MOSFET N-CH 20V 37A I-PAK Infineon Technologies	9,788	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	37A (Tc)	4.5V, 10V	15mOhm @ 15A, 10V	Through Hole	2.55V @ 250µA	7.1 nC @ 4.5 V	20 V	±20V	560 pF @ 10 V	-	-	IPAK	-	35W (Tc)	-55°C ~ 175°C (TJ)
IPS60R360PFD7SAKMA1 MOSFET N-CH 650V 10A TO251-3 Infineon Technologies	2,479	-	询价单	数据表	CoolMOS™PFD7	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	10A (Tc)	10V	360mOhm @ 2.9A, 10V	Through Hole	4.5V @ 140µA	12.7 nC @ 10 V	650 V	±20V	534 pF @ 400 V	-	-	PG-TO251-3	-	43W (Tc)	-40°C ~ 150°C (TJ)
IRLR7807ZCTRRP MOSFET N-CH 30V 43A DPAK Infineon Technologies	2,801	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	43A (Tc)	4.5V, 10V	13.8mOhm @ 15A, 10V	Surface Mount	2.25V @ 250µA	11 nC @ 4.5 V	30 V	±20V	780 pF @ 15 V	-	-	TO-252AA (DPAK)	-	40W (Tc)	-55°C ~ 175°C (TJ)
IPP60R120C7XKSA1 MOSFET N-CH 600V 19A TO220-3 Infineon Technologies	622	-	询价单	数据表	CoolMOS™ C7	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	19A (Tc)	10V	120mOhm @ 7.8A, 10V	Through Hole	4V @ 390µA	34 nC @ 10 V	600 V	±20V	1500 pF @ 400 V	-	-	PG-TO220-3	-	92W (Tc)	-55°C ~ 150°C (TJ)
IPB79CN10N G MOSFET N-CH 100V 13A D2PAK Infineon Technologies	6,370	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V	79mOhm @ 13A, 10V	Surface Mount	4V @ 12µA	11 nC @ 10 V	100 V	±20V	716 pF @ 50 V	-	-	PG-TO263-3	-	31W (Tc)	-55°C ~ 175°C (TJ)

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