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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IIPC26S3N04X2MA1MOSFET Infineon Technologies |
2,445 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IIPC63S4N08X2SA1MOSFET Infineon Technologies |
6,208 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IPC60R099P7X7SA1MOSFET N-CH BARE DIE Infineon Technologies |
4,399 | - |
|
数据表 |
* | - | Bulk | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPT60R150G7XTMA1MOSFET N-CH 600V 17A 8HSOF Infineon Technologies |
1,304 | - |
|
数据表 |
CoolMOS™ G7 | 8-PowerSFN | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | 10V | 150mOhm @ 5.3A, 10V | Surface Mount | 4V @ 260µA | 23 nC @ 10 V | 600 V | ±20V | 902 pF @ 400 V | - | - | PG-HSOF-8-2 | - | 106W (Tc) | -55°C ~ 150°C (TJ) |
|
IPA030N10NF2SXKSA1TRENCH >=100V PG-TO220-3 Infineon Technologies |
8,762 | - |
|
数据表 |
StrongIRFET™ 2 | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 83A (Tc) | 6V, 10V | 3mOhm @ 50A, 10V | Through Hole | 3.8V @ 169µA | 154 nC @ 10 V | 100 V | ±20V | 7300 pF @ 50 V | - | - | PG-TO220 Full Pack | - | 41W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF8707GTRPBFMOSFET N-CH 30V 11A 8SO Infineon Technologies |
3,225 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 11A (Ta) | 4.5V, 10V | 11.9mOhm @ 11A, 10V | Surface Mount | 2.35V @ 25µA | 9.3 nC @ 4.5 V | 30 V | ±20V | 760 pF @ 15 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
IPD50R1K4CEBTMA1MOSFET N-CH 500V 3.1A TO252-3 Infineon Technologies |
5,117 | - |
|
数据表 |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.1A (Tc) | 13V | 1.4Ohm @ 900mA, 13V | Surface Mount | 3.5V @ 70µA | 1 nC @ 10 V | 500 V | ±20V | 178 pF @ 100 V | - | - | PG-TO252-3 | - | 25W (Tc) | -55°C ~ 150°C (TJ) |
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IPT60R125CFD7XTMA1MOSFET N-CH 600V 21A 8HSOF Infineon Technologies |
1,989 | - |
|
数据表 |
CoolMOS™ CFD7 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 21A (Tc) | 10V | 125mOhm @ 6.8A, 10V | Surface Mount | 4.5V @ 340µA | 31 nC @ 10 V | 600 V | ±20V | 1330 pF @ 400 V | - | - | PG-HSOF-8-2 | - | 127W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPF023N08NF2SATMA1TRENCH 40<-<100V PG-TO263-7 Infineon Technologies |
800 | - |
|
数据表 |
StrongIRFET™ 2 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 209A (Tc) | 6V, 10V | 2.3mOhm @ 100A, 10V | Surface Mount | 3.8V @ 139µA | 133 nC @ 10 V | 80 V | ±20V | 6200 pF @ 40 V | - | - | PG-TO263-7-14 | - | 214W (Tc) | -55°C ~ 175°C (TJ) |
|
IPDD60R125CFD7XTMA1MOSFET N-CH 600V 27A HDSOP-10 Infineon Technologies |
1,688 | - |
|
数据表 |
CoolMOS™ CFD7 | 10-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 27A (Tc) | - | 125mOhm @ 6.8A, 10V | Surface Mount | 4.5V @ 340µA | 31 nC @ 10 V | 600 V | ±20V | 1329 pF @ 400 V | - | - | PG-HDSOP-10-1 | - | 176W (Tc) | -55°C ~ 150°C (TJ) |
