Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 22

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SPN03N60C3 MOSFET N-CH 650V 700MA SOT223-4 Infineon Technologies	6,487	-	询价单	数据表	CoolMOS™	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	700mA (Ta)	10V	1.4Ohm @ 2A, 10V	Surface Mount	3.9V @ 135µA	17 nC @ 10 V	650 V	±20V	400 pF @ 25 V	-	-	PG-SOT223-4	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
IRF9520NPBF MOSFET P-CH 100V 6.8A TO220AB Infineon Technologies	8,226	-	询价单	数据表	HEXFET®	TO-220-3	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	6.8A (Tc)	-	480mOhm @ 4A, 10V	Through Hole	4V @ 250µA	27 nC @ 10 V	100 V	-	350 pF @ 25 V	-	-	TO-220AB	-	-	-
IPB180N06S4H1ATMA2 MOSFET N-CH 60V 180A TO263-7 Infineon Technologies	7,667	-	询价单	数据表	OptiMOS™	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	180A (Tc)	10V	1.7mOhm @ 100A, 10V	Surface Mount	4V @ 200µA	270 nC @ 10 V	60 V	±20V	21900 pF @ 25 V	AEC-Q101	-	PG-TO263-7	Automotive	250W (Tc)	-55°C ~ 175°C (TJ)
IRLL1503 MOSFET N-CH 30V 75A SOT223 Infineon Technologies	7,670	-	询价单	数据表	HEXFET®	TO-261-4, TO-261AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	75A (Ta)	-	3.3mOhm @ 140A, 10V	Through Hole	4V @ 250µA	200 nC @ 10 V	30 V	-	5730 pF @ 25 V	-	-	SOT-223	-	-	-
IRFU15N20DPBF MOSFET N-CH 200V 17A IPAK Infineon Technologies	9,343	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	10V	165mOhm @ 10A, 10V	Through Hole	5.5V @ 250µA	41 nC @ 10 V	200 V	±30V	910 pF @ 25 V	-	-	IPAK (TO-251AA)	-	110W (Tc)	-55°C ~ 175°C (TJ)
IPP60R160C6XKSA1 MOSFET N-CH 600V 23.8A TO220-3 Infineon Technologies	488	-	询价单	数据表	CoolMOS™	TO-220-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	23.8A (Tc)	10V	160mOhm @ 11.3A, 10V	Through Hole	3.5V @ 750µA	75 nC @ 10 V	600 V	±20V	1660 pF @ 100 V	-	-	PG-TO220-3	-	176W (Tc)	-55°C ~ 150°C (TJ)
IRFB3607PBFXKMA1 TRENCH 40<-<100V Infineon Technologies	6,790	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80A (Tj)	10V	9mOhm @ 46A, 10V	Through Hole	4V @ 100µA	84 nC @ 10 V	75 V	±20V	3070 pF @ 50 V	-	-	TO-220AB	-	140W (Tc)	-55°C ~ 175°C (TJ)
IPA65R1K5CEXKSA1 MOSFET N-CH 650V 5.2A TO220 Infineon Technologies	8,022	-	询价单	数据表	CoolMOS™	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.2A (Tc)	10V	1.5Ohm @ 1A, 10V	Through Hole	3.5V @ 130µA	10.5 nC @ 10 V	650 V	±20V	225 pF @ 100 V	-	-	PG-TO220-FP	-	30W (Tc)	-40°C ~ 150°C (TJ)
IRF5803TR MOSFET P-CH 40V 3.4A MICRO6 Infineon Technologies	9,318	-	询价单	数据表	HEXFET®	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	3.4A (Ta)	4.5V, 10V	112mOhm @ 3.4A, 10V	Surface Mount	3V @ 250µA	37 nC @ 10 V	40 V	±20V	1110 pF @ 25 V	-	-	Micro6™(TSOP-6)	-	2W (Ta)	-55°C ~ 150°C (TJ)
IPD031N03M G MOSFET N-CH 30V 90A TO252-3 Infineon Technologies	2,161	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	4.5V, 10V	3.1mOhm @ 30A, 10V	Surface Mount	2.2V @ 250µA	51 nC @ 10 V	30 V	±20V	5300 pF @ 15 V	-	-	PG-TO252-3-11	-	-	-55°C ~ 175°C (TJ)

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