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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXPSC106506QDIODE SIL CARB 650V 10A TO220AC WeEn Semiconductors |
3,000 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 300pF @ 1V, 1MHz | 10A | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
NXPSC10650X6QDIODE SIL CARB 650V 10A TO220F WeEn Semiconductors |
2,995 | - |
|
数据表 |
- | TO-220-2 Full Pack, Isolated Tab | Bulk | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 300pF @ 1V, 1MHz | 10A | - | - | Through Hole | TO-220F | 175°C (Max) |
|
NXPSC10650B6JDIODE SIL CARBIDE 650V 10A D2PAK WeEn Semiconductors |
2,290 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 300pF @ 1V, 1MHz | 10A | - | - | Surface Mount | D2PAK | 175°C (Max) |
|
NXPSC126506QDIODE SIL CARB 650V 12A TO220AC WeEn Semiconductors |
990 | - |
|
数据表 |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 380pF @ 1V, 1MHz | 12A | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
WNSC6D20650B6JDIODE SIL CARBIDE 650V 20A D2PAK WeEn Semiconductors |
4,518 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 780pF @ 1V, 1MHz | 20A | - | - | Surface Mount | D2PAK | 175°C |
|
NXPSC10650QDIODE SIL CARB 650V 10A TO220AC WeEn Semiconductors |
1,916 | - |
|
数据表 |
- | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 300pF @ 1V, 1MHz | 10A | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
|
WNSC2D151200WQDIODE SIL CARB 1.2KV 15A TO247-2 WeEn Semiconductors |
4,589 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 1200 V | 700pF @ 1V, 1MHz | 15A | - | - | Through Hole | TO-247-2 | 175°C |
|
|
NXPSC166506QDIODE SIL CARB 650V 16A TO220AC WeEn Semiconductors |
3,003 | - |
|
数据表 |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 534pF @ 1V, 1MHz | 16A | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
NXPSC10650D6JDIODE SIL CARBIDE 650V 10A DPAK WeEn Semiconductors |
7,204 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 300pF @ 1V, 1MHz | 10A | - | - | Surface Mount | DPAK | 175°C (Max) |
|
WNSC06650T6JDIODE SIL CARBIDE 650V 6A 5DFN WeEn Semiconductors |
2 | - |
|
数据表 |
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 190pF @ 1V, 1MHz | 6A | - | - | Surface Mount | 5-DFN (8x8) | 175°C (Max) |
