WeEn Semiconductors|单个二极管 - 页 18

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
WNSC2D12650TJ DIODE SIL CARBIDE 650V 12A 5DFN WeEn Semiconductors	2,985	-	询价单	数据表	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	380pF @ 1V, 1MHz	12A	-	-	Surface Mount	5-DFN (8x8)	175°C
NXPSC04650D6J DIODE SIL CARBIDE 650V 4A DPAK WeEn Semiconductors	6,462	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	170 µA @ 650 V	130pF @ 1V, 1MHz	4A	-	-	Surface Mount	DPAK	175°C (Max)
WNSC12650T6J DIODE SIL CARBIDE 650V 12A 5DFN WeEn Semiconductors	2,998	-	询价单	数据表	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.8 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	328pF @ 1V, 1MHz	12A	-	-	Surface Mount	5-DFN (8x8)	175°C
NXPSC066506Q DIODE SIL CARB 650V 6A TO220AC WeEn Semiconductors	3,000	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	190pF @ 1V, 1MHz	6A	-	-	Through Hole	TO-220AC	175°C (Max)
NXPSC06650B6J DIODE SIL CARBIDE 650V 6A D2PAK WeEn Semiconductors	3,188	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	190pF @ 1V, 1MHz	6A	-	-	Surface Mount	D2PAK	175°C (Max)
NXPSC06650X6Q DIODE SIL CARBIDE 650V 6A TO220F WeEn Semiconductors	197	-	询价单	数据表	-	TO-220-2 Full Pack, Isolated Tab	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	190pF @ 1V, 1MHz	6A	-	-	Through Hole	TO-220F	175°C (Max)
WND45P16WQ DIODE GEN PURP 1.6KV 45A TO247-2 WeEn Semiconductors	1,008	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	1600 V	1.4 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1600 V	-	45A	-	-	Through Hole	TO-247-2	150°C
WNSC2D2012006Q WNSC2D201200/SOD59A/STANDARD MAR WeEn Semiconductors	4,999	-	询价单	数据表	-	TO-220-2	Bulk	Active	SiC (Silicon Carbide) Schottky	1200 V	1.65 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	950pF @ 1V, 1MHz	20A	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
NXPSC06650D6J DIODE SIL CARBIDE 650V 6A DPAK WeEn Semiconductors	5,450	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	190pF @ 1V, 1MHz	6A	-	-	Surface Mount	DPAK	175°C (Max)
WND60P16WQ DIODE GEN PURP 1.6KV 60A TO247-2 WeEn Semiconductors	463	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	1600 V	1.12 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 1600 V	-	60A	-	-	Through Hole	TO-247-2	-55°C ~ 150°C

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