WeEn Semiconductors|单个二极管 - 页 17

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
BYC30W-1200PQ DIODE GEN PURP 1.2KV 30A TO247-2 WeEn Semiconductors	386	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	1200 V	3.3 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	250 µA @ 1200 V	-	30A	-	-	Through Hole	TO-247-2	175°C (Max)
WNSC2D10650TJ DIODE SIL CARBIDE 650V 10A 5DFN WeEn Semiconductors	890	-	询价单	数据表	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	310pF @ 1V, 1MHz	10A	-	-	Surface Mount	5-DFN (8x8)	175°C
WNSC2D10650WQ DIODE SIL CARB 650V 10A TO247-2 WeEn Semiconductors	517	-	询价单	数据表	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	310pF @ 1V, 1MHz	10A	-	-	Through Hole	TO-247-2	175°C
BYC75W-600PT2Q DIODE GEN PURP 600V 75A TO247-2 WeEn Semiconductors	508	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	600 V	2.75 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 600 V	-	75A	-	-	Through Hole	TO-247-2	175°C
WNSC6D16650CW6Q DIODE SIL CARB 650V 16A TO247-3 WeEn Semiconductors	3,000	-	询价单	数据表	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.45 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	780pF @ 1V, 1MHz	16A	-	-	Through Hole	TO-247-3	175°C
BYC60W-1200PQ BYC60W-1200P/TO247-2L/STANDARD M WeEn Semiconductors	4,320	-	询价单	数据表	-	TO-247-2	Bulk	Active	Standard	1200 V	3.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	96 ns	250 µA @ 1200 V	-	60A	-	-	Through Hole	TO-247-2	175°C
BYC60W-600PQ DIODE GEN PURP 600V 60A TO247-2 WeEn Semiconductors	2,426	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	600 V	2.6 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 600 V	-	60A	-	-	Through Hole	TO-247-2	175°C (Max)
WNSC2D10650DJ DIODE SIL CARBIDE 650V 10A DPAK WeEn Semiconductors	7,097	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	310pF @ 1V, 1MHz	10A	-	-	Surface Mount	DPAK	175°C
WNSC6D10650Q DIODE SIL CARB 650V 10A TO220AC WeEn Semiconductors	935	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	10A	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
WNSC2D10650BJ DIODE SIL CARBIDE 650V 10A D2PAK WeEn Semiconductors	8,768	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	310pF @ 1V, 1MHz	10A	-	-	Surface Mount	D2PAK	175°C

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