WeEn Semiconductors|单个二极管 - 页 1

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
BYR29X-800PQ DIODE GEN PURP 800V 8A TO220FP WeEn Semiconductors	3,599	-	询价单	数据表	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	800 V	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	10 µA @ 800 V	-	8A	-	-	Through Hole	TO-220FP	175°C (Max)
WND10M600XQ WND10M600X/TO-220F/STANDARD MARK WeEn Semiconductors	2,256	-	询价单	数据表	-	TO-220-2 Full Pack, Isolated Tab	Bulk	Active	Standard	600 V	980 mV @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-	10A	-	-	Through Hole	TO-220F	150°C
BYV25X-600,127 DIODE GEN PURP 600V 5A TO220FP WeEn Semiconductors	5,265	-	询价单	数据表	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	600 V	1.3 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	50 µA @ 600 V	-	5A	-	-	Through Hole	TO-220FP	150°C (Max)
BYC5-600PQ DIODE GEN PURP 600V 5A TO220AC WeEn Semiconductors	5,706	-	询价单	数据表	-	TO-220-2	Tube	Active	Standard	600 V	3.3 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 600 V	-	5A	-	-	Through Hole	TO-220AC	-65°C ~ 175°C
WND08P16XQ DIODE GEN PURP 1.6KV 8A TO220F WeEn Semiconductors	4,197	-	询价单	数据表	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	1600 V	1.2 V @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 1600 V	-	8A	-	-	Through Hole	TO-220F	150°C
BYW29E-100,127 DIODE GEN PURP 100V 8A TO220AC WeEn Semiconductors	3,966	-	询价单	数据表	-	TO-220-2	Tube	Active	Standard	100 V	1.05 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 100 V	-	8A	-	-	Through Hole	TO-220AC	150°C (Max)
BYC5D-500,127 DIODE GEN PURP 500V 5A TO220AC WeEn Semiconductors	9,145	-	询价单	数据表	-	TO-220-2	Tube	Active	Standard	500 V	2 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	16 ns	40 µA @ 500 V	-	5A	-	-	Through Hole	TO-220AC	150°C (Max)
WNSC2D021200D6J WNSC2D021200D/TO252/REEL 13" Q1 WeEn Semiconductors	6,287	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	1.65 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 1200 V	95pF @ 1V, 1MHz	2A	-	-	Surface Mount	DPAK	175°C
BYV25F-600,127 DIODE GEN PURP 600V 5A TO220AC WeEn Semiconductors	3,087	-	询价单	数据表	-	TO-220-2	Tube	Active	Standard	600 V	1.9 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	50 µA @ 600 V	-	5A	-	-	Through Hole	TO-220AC	150°C (Max)
BYC10D-600,127 DIODE GEN PURP 500V 10A TO220AC WeEn Semiconductors	4,275	-	询价单	数据表	-	TO-220-2	Tube	Active	Standard	500 V	2.5 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	18 ns	200 µA @ 600 V	-	10A	-	-	Through Hole	TO-220AC	150°C (Max)

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