WeEn Semiconductors|单个二极管 - 页 21

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
NXPSC206506Q DIODE SIL CARB 650V 20A TO220AC WeEn Semiconductors	3,041	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	500 µA @ 650 V	600pF @ 1V, 1MHz	20A	-	-	Through Hole	TO-220AC	175°C (Max)
WNSC2D30650WQ SILICON CARBIDE SCHOTTKY DI WeEn Semiconductors	275	-	询价单	数据表	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	980pF @ 1V, 1MHz	30A	-	-	Through Hole	TO-247-2	175°C
WNSC6D20650WQ DIODE SIL CARB 650V 20A TO247-2 WeEn Semiconductors	484	-	询价单	数据表	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.4 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	1200pF @ 1V, 1MHz	20A	-	-	Through Hole	TO-247-2	175°C
WNSC2D201200WQ DIODE SIL CARB 1.2KV 20A TO247-2 WeEn Semiconductors	2,391	-	询价单	数据表	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	845pF @ 1V, 1MHz	20A	-	-	Through Hole	TO-247-2	175°C
BYC100W-1200PQ DIODE GP 1.2KV 100A TO247-2 WeEn Semiconductors	6,606	-	询价单	数据表	EEPP™	TO-247-2	Tube	Active	Standard	1200 V	3.3 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	250 µA @ 1200 V	-	100A	-	-	Through Hole	TO-247-2	175°C (Max)
WNSC2D301200W6Q WNSC2D301200W/TO247-2L/STANDARD WeEn Semiconductors	9,578	-	询价单	数据表	-	TO-247-2	Bulk	Active	SiC (Silicon Carbide) Schottky	1200 V	1.6 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 1200 V	1407pF @ 1V, 1MHz	30A	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
WNSC2D401200W6Q WNSC2D401200W/TO247-2L/STANDARD WeEn Semiconductors	9,449	-	询价单	数据表	-	TO-247-2	Bulk	Active	SiC (Silicon Carbide) Schottky	1200 V	1.6 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	2068pF @ 1V, 1MHz	40A	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
WBST080SCM120CGALW WBST080SCM120CGAL/NAU000/NO MARK WeEn Semiconductors	4,318	-	询价单	数据表	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
BYV10MX-600PQ DIODE GEN PURP 600V 10A TO220F WeEn Semiconductors	38	-	询价单	数据表	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	600 V	2 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	-	10A	-	-	Through Hole	TO-220F	175°C
BYC5DX-500,127 DIODE GEN PURP 500V 5A TO220FP WeEn Semiconductors	1,000	-	询价单	数据表	*	TO-220-2 Full Pack, Isolated Tab	Bulk	Active	Standard	500 V	2 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	16 ns	40 µA @ 500 V	-	5A	-	-	Through Hole	TO-220FP	150°C (Max)

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