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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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WNSC021200QDIODE SIL CARB 1.2KV 2A TO220AC WeEn Semiconductors |
8,662 | - |
|
数据表 |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.6 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 109pF @ 1V, 1MHz | 2A | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
|
WNSC201200WQDIODE SIL CARB 1.2KV 20A TO247-2 WeEn Semiconductors |
3,478 | - |
|
数据表 |
- | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.6 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 220 µA @ 1200 V | 1020pF @ 1V, 1MHz | 20A | - | - | Through Hole | TO-247-2 | 175°C (Max) |
|
|
WNSC051200QDIODE SIL CARB 1.2KV 5A TO220AC WeEn Semiconductors |
5,407 | - |
|
数据表 |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.6 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 250pF @ 1V, 1MHz | 5A | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
|
NXPSC16650B6JDIODE SIL CARBIDE 650V 16A D2PAK WeEn Semiconductors |
3,106 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 534pF @ 1V, 1MHz | 16A | - | - | Surface Mount | D2PAK | 175°C (Max) |
|
WNSC04650T6JDIODE SIL CARBIDE 650V 4A 5DFN WeEn Semiconductors |
4,442 | - |
|
数据表 |
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 141pF @ 1V, 1MHz | 4A | - | - | Surface Mount | 5-DFN (8x8) | 175°C (Max) |
|
|
NXPSC12650B6JDIODE SIL CARBIDE 650V 12A D2PAK WeEn Semiconductors |
2,892 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 380pF @ 1V, 1MHz | 12A | - | - | Surface Mount | D2PAK | 175°C (Max) |
|
|
WNSC10650T6JDIODE SIL CARBIDE 650V 10A 5DFN WeEn Semiconductors |
7,135 | - |
|
数据表 |
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 328pF @ 1V, 1MHz | 10A | - | - | Surface Mount | 5-DFN (8x8) | 175°C (Max) |
|
|
WNSC08650T6JDIODE SIL CARBIDE 650V 8A 5DFN WeEn Semiconductors |
8,999 | - |
|
数据表 |
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 267pF @ 1V, 1MHz | 8A | - | - | Surface Mount | 5-DFN (8x8) | 175°C (Max) |
|
|
WNSC12650WQDIODE SIL CARB 650V 12A TO247-2 WeEn Semiconductors |
7,068 | - |
|
数据表 |
- | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 328pF @ 1V, 1MHz | 12A | - | - | Through Hole | TO-247-2 | 175°C |
|
|
WNSC10650WQDIODE SIL CARB 650V 10A TO247-2 WeEn Semiconductors |
3,149 | - |
|
数据表 |
- | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 328pF @ 1V, 1MHz | 10A | - | - | Through Hole | TO-247-2 | 175°C |
