WeEn Semiconductors|单个二极管 - 页 22

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
BYV29F-600,127 DIODE GEN PURP 600V 9A TO220AC WeEn Semiconductors	1,000	-	询价单	数据表	*	TO-220-2	Bulk	Active	Standard	600 V	1.9 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	50 µA @ 600 V	-	9A	-	-	Through Hole	TO-220AC	150°C (Max)
BYV25G-600,127 NOW WEEN - BYV25G-600 - ULTRAFAS WeEn Semiconductors	1,000	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	Standard	600 V	1.3 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	50 µA @ 600 V	-	5A	-	-	Through Hole	I2PAK (TO-262)	150°C (Max)
BYR29X-600,127 DIODE GEN PURP 600V 8A TO220FP WeEn Semiconductors	1,000	-	询价单	数据表	*	TO-220-2 Full Pack, Isolated Tab	Bulk	Active	Standard	600 V	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 600 V	-	8A	-	-	Through Hole	TO-220FP	150°C (Max)
NXPSC04650DJ DIODE SIL CARBIDE 650V 4A DPAK WeEn Semiconductors	4,190	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	170 µA @ 650 V	130pF @ 1V, 1MHz	4A	-	-	Surface Mount	DPAK	175°C (Max)
NXPSC08650BJ DIODE SIL CARBIDE 650V 8A D2PAK WeEn Semiconductors	3,736	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	230 µA @ 650 V	260pF @ 1V, 1MHz	8A	-	-	Surface Mount	D2PAK	175°C (Max)
NXPSC08650DJ DIODE SIL CARBIDE 650V 8A DPAK WeEn Semiconductors	4,110	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	230 µA @ 650 V	260pF @ 1V, 1MHz	8A	-	-	Surface Mount	DPAK	175°C (Max)
NXPLQSC106506Q DIODE SCHOTTKY 650V 10A TO220AC WeEn Semiconductors	4,503	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.85 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	230 µA @ 650 V	250pF @ 1V, 1MHz	10A	-	-	Through Hole	TO-220AC	175°C (Max)
WNSC201200CWQ DIODE SIL CARB 1.2KV 20A TO247-3 WeEn Semiconductors	4,087	-	询价单	数据表	-	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	110 µA @ 1200 V	510pF @ 1V, 1MHz	20A	-	-	Through Hole	TO-247-3	175°C (Max)
WNSC401200CWQ DIODE SIL CARB 1.2KV 40A TO247-3 WeEn Semiconductors	5,908	-	询价单	数据表	-	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	1.75 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	810pF @ 1V, 1MHz	40A	-	-	Through Hole	TO-247-3	175°C (Max)
WNSC101200Q DIODE SIL CARB 1.2KV 10A TO220AC WeEn Semiconductors	7,277	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	110 µA @ 1200 V	510pF @ 1V, 1MHz	10A	-	-	Through Hole	TO-220AC	175°C (Max)

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