WeEn Semiconductors|单个二极管 - 页 19

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
BYC75W-600PQ DIODE GEN PURP 600V 75A TO247-2 WeEn Semiconductors	851	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	600 V	2.75 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 600 V	-	75A	-	-	Through Hole	TO-247-2	175°C (Max)
WNSC2D101200WQ DIODE SIL CARB 1.2KV 10A TO247-2 WeEn Semiconductors	2,317	-	询价单	数据表	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.65 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	110 µA @ 1200 V	490pF @ 1V, 1MHz	10A	-	-	Through Hole	TO-247-2	175°C
WNSC2D08650TJ DIODE SIL CARBIDE 650V 8A 5DFN WeEn Semiconductors	8,039	-	询价单	数据表	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	260pF @ 1V, 1MHz	8A	-	-	Surface Mount	5-DFN (8x8)	175°C
NXPSC08650D6J DIODE SIL CARBIDE 650V 8A DPAK WeEn Semiconductors	7,184	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	230 µA @ 650 V	260pF @ 1V, 1MHz	8A	-	-	Surface Mount	DPAK	175°C (Max)
NXPSC086506Q DIODE SIL CARB 650V 8A TO220AC WeEn Semiconductors	3,000	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	230 µA @ 650 V	260pF @ 1V, 1MHz	8A	-	-	Through Hole	TO-220AC	175°C (Max)
NXPSC08650X6Q DIODE SIL CARBIDE 650V 8A TO220F WeEn Semiconductors	2,926	-	询价单	数据表	-	TO-220-2 Full Pack, Isolated Tab	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	230 µA @ 650 V	260pF @ 1V, 1MHz	8A	-	-	Through Hole	TO-220F	175°C (Max)
BYC75W-1200PQ DIODE GEN PURP 1.2KV 75A TO247-2 WeEn Semiconductors	9,568	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	1200 V	-	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	250 µA @ 1200 V	-	75A	-	-	Through Hole	TO-247-2	175°C (Max)
WNSC2D201200W6Q DIODE SIL CARB 1.2KV 20A TO247-2 WeEn Semiconductors	2,379	-	询价单	数据表	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	845pF @ 1V, 1MHz	20A	-	-	Through Hole	TO-247-2	175°C
NXPSC08650B6J DIODE SIL CARBIDE 650V 8A D2PAK WeEn Semiconductors	3,160	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	230 µA @ 650 V	260pF @ 1V, 1MHz	8A	-	-	Surface Mount	D2PAK	175°C (Max)
WNSC6D16650B6J DIODE SIL CARBIDE 650V 16A D2PAK WeEn Semiconductors	2,665	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.45 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	780pF @ 1V, 1MHz	16A	-	-	Surface Mount	D2PAK	175°C

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