WeEn Semiconductors|单个二极管 - 页 16

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
NXPSC046506Q DIODE SIL CARB 650V 4A TO220AC WeEn Semiconductors	20,200	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	170 µA @ 650 V	130pF @ 1V, 1MHz	4A	-	-	Through Hole	TO-220AC	175°C (Max)
NXPSC04650X6Q DIODE SIL CARBIDE 650V 4A TO220F WeEn Semiconductors	2,826	-	询价单	数据表	-	TO-220-2 Full Pack, Isolated Tab	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	170 µA @ 650 V	130pF @ 1V, 1MHz	4A	-	-	Through Hole	TO-220F	175°C (Max)
NXPSC04650B6J DIODE SIL CARBIDE 650V 4A D2PAK WeEn Semiconductors	3,090	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	170 µA @ 650 V	130pF @ 1V, 1MHz	4A	-	-	Surface Mount	D2PAK	175°C (Max)
BYV60W-600PQ DIODE GEN PURP 600V 60A TO247-2 WeEn Semiconductors	4,084	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	600 V	2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	10 µA @ 600 V	-	60A	-	-	Through Hole	TO-247-2	175°C (Max)
WNSC2D08650DJ DIODE SIL CARBIDE 650V 8A DPAK WeEn Semiconductors	7,463	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	260pF @ 1V, 1MHz	8A	-	-	Surface Mount	DPAK	175°C
BYQ60W-600PT2Q DIODE GEN PURP 600V 60A TO247-2 WeEn Semiconductors	569	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	600 V	2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	10 µA @ 600 V	-	60A	-	-	Through Hole	TO-247-2	175°C
BYV60W-600PT2Q DIODE GEN PURP 600V 60A TO247-2 WeEn Semiconductors	468	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	600 V	1.7 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	79 ns	10 µA @ 600 V	-	60A	-	-	Through Hole	TO-247-2	175°C
WNSC2D10650Q DIODE SIL CARB 650V 10A TO220AC WeEn Semiconductors	995	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	310pF @ 1V, 1MHz	10A	-	-	Through Hole	TO-220AC	175°C
WNSC6D166506Q DIODE SIL CARB 650V 16A TO220AC WeEn Semiconductors	2,976	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.45 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	780pF @ 1V, 1MHz	16A	-	-	Through Hole	TO-220AC	175°C
BYC30W-600PT2Q DIODE GEN PURP 600V 30A TO247-2 WeEn Semiconductors	1,787	-	询价单	数据表	-	TO-247-2	Bulk	Active	Standard	600 V	2.75 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	34 ns	10 µA @ 600 V	-	30A	-	-	Through Hole	TO-247-2	175°C (Max)

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