WeEn Semiconductors|单个二极管 - 页 14

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
BYV29X-600,127 DIODE GEN PURP 600V 9A TO220FP WeEn Semiconductors	6,198	-	询价单	数据表	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	600 V	1.26 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	50 µA @ 600 V	-	9A	-	-	Through Hole	TO-220FP	150°C (Max)
BYT79X-600,127 DIODE GEN PURP 600V 15A TO220FP WeEn Semiconductors	478	-	询价单	数据表	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	600 V	1.38 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	50 µA @ 600 V	-	15A	-	-	Through Hole	TO-220FP	150°C (Max)
BYV29B-500,118 DIODE GEN PURP 500V 9A D2PAK WeEn Semiconductors	4,725	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	500 V	1.25 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	50 µA @ 500 V	-	9A	-	-	Surface Mount	D2PAK	150°C (Max)
BYT79-600,127 DIODE GEN PURP 600V 15A TO220AC WeEn Semiconductors	3,965	-	询价单	数据表	-	TO-220-2	Tube	Active	Standard	600 V	1.38 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	50 µA @ 600 V	-	15A	-	-	Through Hole	TO-220AC	150°C (Max)
BYC20X-600,127 DIODE GEN PURP 500V 20A TO220FP WeEn Semiconductors	3,733	-	询价单	数据表	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	500 V	2.9 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	200 µA @ 600 V	-	20A	-	-	Through Hole	TO-220FP	150°C (Max)
WNSC2D151200W6Q WNSC2D151200W/TO247-2L/STANDARD WeEn Semiconductors	2,929	-	询价单	数据表	-	TO-247-2	Bulk	Active	SiC (Silicon Carbide) Schottky	1200 V	1.7 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 1200 V	700pF @ 1V, 1MHz	15A	-	-	Through Hole	TO-247-2	175°C
WNSC2D04650DJ DIODE SIL CARBIDE 650V 4A DPAK WeEn Semiconductors	4,987	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	125pF @ 1V, 1MHz	4A	-	-	Surface Mount	DPAK	175°C
WNSC2D04650XQ DIODE SIL CARBIDE 650V 4A TO220F WeEn Semiconductors	2,756	-	询价单	数据表	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	125pF @ 1V, 1MHz	4A	-	-	Through Hole	TO-220F	175°C
WNSC2D04650TJ DIODE SIL CARBIDE 650V 4A 5DFN WeEn Semiconductors	10,523	-	询价单	数据表	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	125pF @ 1V, 1MHz	4A	-	-	Surface Mount	5-DFN (8x8)	175°C
WND35P12BJ DIODE GEN PURP 1.2KV 35A D2PAK WeEn Semiconductors	1,799	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	1200 V	1.4 V @ 35 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 1200 V	-	35A	-	-	Surface Mount	D2PAK	-40°C ~ 150°C

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