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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
BYV25FD-600,118

BYV25FD-600,118

DIODE GEN PURP 600V 5A DPAK

WeEn Semiconductors

8,191 -
BYV25FD-600,118

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 600 V 1.9 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 50 µA @ 600 V - 5A - - Surface Mount DPAK 150°C (Max)
BYV10ED-600PJ

BYV10ED-600PJ

DIODE GEN PURP 600V 10A DPAK

WeEn Semiconductors

4,562 -
BYV10ED-600PJ

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 600 V 2 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 600 V - 10A - - Surface Mount DPAK 175°C (Max)
BYC8-600P,127

BYC8-600P,127

DIODE GEN PURP 600V 8A TO220AC

WeEn Semiconductors

3,051 -
BYC8-600P,127

数据表

- TO-220-2 Tube Active Standard 600 V 1.9 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 18 ns 20 µA @ 600 V - 8A - - Through Hole TO-220AC 175°C (Max)
BYV10EX-600PQ

BYV10EX-600PQ

DIODE GEN PURP 600V 10A TO220FP

WeEn Semiconductors

11,997 -
BYV10EX-600PQ

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Standard 600 V 2 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 600 V - 10A - - Through Hole TO-220FP -65°C ~ 175°C
BYT79X-600PQ

BYT79X-600PQ

DIODE GEN PURP 600V 15A TO220FP

WeEn Semiconductors

1,350 -
BYT79X-600PQ

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Standard 600 V 1.38 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 10 µA @ 600 V - 15A - - Through Hole TO-220FP 175°C (Max)
BYC30X-600PSQ

BYC30X-600PSQ

DIODE GEN PURP 600V 30A TO220F

WeEn Semiconductors

21,397 -
BYC30X-600PSQ

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Standard 600 V 2.75 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 10 µA @ 600 V - 30A - - Through Hole TO-220F 175°C
BYC15-600,127

BYC15-600,127

DIODE GEN PURP 500V 15A TO220AC

WeEn Semiconductors

6,257 -
BYC15-600,127

数据表

- TO-220-2 Tube Active Standard 500 V 2.9 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 200 µA @ 600 V - 15A - - Through Hole TO-220AC 150°C (Max)
BYC5X-600PQ

BYC5X-600PQ

DIODE GEN PURP 600V 5A TO220F

WeEn Semiconductors

11,812 -
BYC5X-600PQ

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Standard 600 V 3.3 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 10 µA @ 600 V - 5A - - Through Hole TO-220F -65°C ~ 175°C
BYV25D-600,118

BYV25D-600,118

DIODE GEN PURP 600V 5A DPAK

WeEn Semiconductors

7,958 -
BYV25D-600,118

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 600 V 1.3 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 50 µA @ 600 V - 5A - - Surface Mount DPAK 150°C (Max)
WND08P16DJ

WND08P16DJ

DIODE GEN PURP 1.6KV 8A DPAK

WeEn Semiconductors

24,728 -
WND08P16DJ

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 1600 V 1.25 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 1600 V - 8A - - Surface Mount DPAK 150°C
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