WeEn Semiconductors|单个二极管 - 页 15

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
WNSC2D06650TJ DIODE SIL CARBIDE 650V 6A 5DFN WeEn Semiconductors	2,024	-	询价单	数据表	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	198pF @ 1V, 1MHz	6A	-	-	Surface Mount	5-DFN (8x8)	175°C
BYV30JT-600PQ DIODE GEN PURP 600V 30A TO3P WeEn Semiconductors	3,840	-	询价单	数据表	-	TO-3P-3, SC-65-3	Tube	Active	Standard	600 V	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	10 µA @ 600 V	-	30A	-	-	Through Hole	TO-3P	175°C (Max)
BYC30X-600P,127 DIODE GEN PURP 600V 30A TO220FP WeEn Semiconductors	9,203	-	询价单	数据表	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	600 V	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	-	30A	-	-	Through Hole	TO-220FP	175°C (Max)
WNSC2D03650MBJ DIODE SIL CARBIDE 650V 3A SMB WeEn Semiconductors	5,409	-	询价单	数据表	-	DO-214AA, SMB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 3 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	130pF @ 1V, 1MHz	3A	-	-	Surface Mount	SMB	175°C
WNSC6D01650MBJ DIODE SIL CARBIDE 650V 1A SMB WeEn Semiconductors	1,944	-	询价单	数据表	-	DO-214AA, SMB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.4 V @ 1 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	130pF @ 1V, 1MHz	1A	-	-	Surface Mount	SMB	175°C
WNSC2D06650DJ DIODE SIL CARBIDE 650V 6A DPAK WeEn Semiconductors	11,997	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	198pF @ 1V, 1MHz	6A	-	-	Surface Mount	DPAK	175°C
WNSC2D08650Q DIODE SIL CARB 650V 8A TO220AC WeEn Semiconductors	4,990	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	260pF @ 1V, 1MHz	8A	-	-	Through Hole	TO-220AC	175°C
BYC30WT-600PQ DIODE GEN PURP 600V 30A TO247-3 WeEn Semiconductors	1,585	-	询价单	数据表	-	TO-247-3	Tube	Active	Standard	600 V	2.75 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	22 ns	10 µA @ 600 V	-	30A	-	-	Through Hole	TO-247-3	175°C (Max)
WB100FC120ALZ WB100FC120AL/NAU000/NO MARK*CHIP WeEn Semiconductors	4,923	-	询价单	数据表	-	Die	Bulk	Active	Standard	1200 V	3.3 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	250 µA @ 1200 V	-	100A	-	-	Surface Mount	Wafer	175°C
BYC30-600P,127 DIODE GEN PURP 600V 30A TO220AC WeEn Semiconductors	7,896	-	询价单	数据表	-	TO-220-2	Tube	Active	Standard	600 V	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	-	30A	-	-	Through Hole	TO-220AC	175°C (Max)

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