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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
BYC8D-600,127

BYC8D-600,127

DIODE GEN PURP 600V 8A TO220AC

WeEn Semiconductors

5,986 -
BYC8D-600,127

数据表

- TO-220-2 Tube Active Standard 600 V 2.9 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 40 µA @ 600 V - 8A - - Through Hole TO-220AC 150°C (Max)
BYW29EX-200,127

BYW29EX-200,127

DIODE GEN PURP 200V 8A TO220FP

WeEn Semiconductors

17,727 -
BYW29EX-200,127

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Standard 200 V 1.05 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 10 µA @ 200 V - 8A - - Through Hole TO-220FP 150°C (Max)
BYC10X-600,127

BYC10X-600,127

DIODE GEN PURP 500V 10A TO220FP

WeEn Semiconductors

11,793 -
BYC10X-600,127

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Standard 500 V 2.9 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 200 µA @ 600 V - 10A - - Through Hole TO-220FP 150°C (Max)
BYV29X-600PQ

BYV29X-600PQ

DIODE GEN PURP 600V 9A TO220FP

WeEn Semiconductors

5,449 -
BYV29X-600PQ

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Standard 600 V 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 600 V - 9A - - Through Hole TO-220FP 175°C (Max)
BYC8DX-600,127

BYC8DX-600,127

DIODE GEN PURP 600V 8A TO220FP

WeEn Semiconductors

5,987 -
BYC8DX-600,127

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Standard 600 V 2.9 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 40 µA @ 600 V - 8A - - Through Hole TO-220FP 150°C (Max)
BYC8X-600,127

BYC8X-600,127

DIODE GEN PURP 600V 8A TO220FP

WeEn Semiconductors

5,630 -
BYC8X-600,127

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Standard 600 V 2.9 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 52 ns 150 µA @ 600 V - 8A - - Through Hole TO-220FP 150°C (Max)
BYC15X-600PQ

BYC15X-600PQ

DIODE GEN PURP 600V 15A TO220F

WeEn Semiconductors

4,911 -
BYC15X-600PQ

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Standard 600 V 3.2 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 18 ns 10 µA @ 600 V - 15A - - Through Hole TO-220F 175°C (Max)
WND10P08YQ

WND10P08YQ

DIODE GP 800V 10A IITO220-2

WeEn Semiconductors

5,973 -
WND10P08YQ

数据表

- TO-220-2 Tube Active Standard 800 V 1.3 V @ 10 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V - 10A - - Through Hole IITO-220-2 150°C
BYC10DX-600,127

BYC10DX-600,127

DIODE GEN PURP 500V 10A TO220FP

WeEn Semiconductors

5,465 -
BYC10DX-600,127

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Standard 500 V 2.5 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 18 ns 200 µA @ 600 V - 10A - - Through Hole TO-220FP 150°C (Max)
BYC15-1200PQ

BYC15-1200PQ

DIODE GEN PURP 1.2KV 15A TO220AC

WeEn Semiconductors

11,837 -
BYC15-1200PQ

数据表

- TO-220-2 Bulk Active Standard 1200 V 3.2 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 61 ns 100 µA @ 1200 V - 15A - - Through Hole TO-220AC 175°C (Max)
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