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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANTX1N6628

JANTX1N6628

DIODE GEN PURP 660V 1.75A AXIAL

Microchip Technology

7,394 -
JANTX1N6628

数据表

- E, Axial Bulk Active Standard 660 V 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 660 V 40pF @ 10V, 1MHz 1.75A Military MIL-PRF-19500/590 Through Hole - -65°C ~ 150°C
JANTXV1N5554US/TR

JANTXV1N5554US/TR

DIODE GEN PURP 1KV 3A D-5B

Microchip Technology

4,068 -
JANTXV1N5554US/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 1000 V 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 1 V - 3A Military MIL-PRF-19500/420 Surface Mount D-5B -65°C ~ 175°C
JANTXV1N5553US/TR

JANTXV1N5553US/TR

DIODE GEN PURP 800V 3A B SQ-MELF

Microchip Technology

4,155 -
JANTXV1N5553US/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 800 V 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs - - 3A Military MIL-PRF-19500/420 Surface Mount B, SQ-MELF -65°C ~ 175°C
CDLL3595

CDLL3595

SIGNAL OR COMPUTER DIODE

Microchip Technology

6,572 -
CDLL3595

数据表

* - Bulk Active - - - - - - - - - - - - -
1N6074US/TR

1N6074US/TR

DIODE GEN PURP 100V 3A D-5A

Microchip Technology

6,174 -
1N6074US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 100 V 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 100 V - 3A - - Surface Mount D-5A -65°C ~ 155°C
JAN1N5811URS/TR

JAN1N5811URS/TR

DIODE GP 150V 3A SQ-MELF B

Microchip Technology

2,049 -
JAN1N5811URS/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 150 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz 3A Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JAN1N5809URS/TR

JAN1N5809URS/TR

UFR,FRR

Microchip Technology

5,724 -
JAN1N5809URS/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 100 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz 3A Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JAN1N5807URS/TR

JAN1N5807URS/TR

UFR,FRR

Microchip Technology

4,475 -
JAN1N5807URS/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 50 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz 3A Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
1N6642UB/TR

1N6642UB/TR

DIODE GEN PURP UB

Microchip Technology

8,591 -
1N6642UB/TR

数据表

- 4-SMD, No Lead Tape & Reel (TR) Active Standard - 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns - 5pF @ 0V, 1MHz - - - Surface Mount UB -
1N6073US

1N6073US

DIODE GEN PURP 50V 3A D-5A

Microchip Technology

7,348 -
1N6073US

数据表

- SQ-MELF, A Bulk Active Standard 50 V 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 50 V - 3A - - Surface Mount D-5A -65°C ~ 155°C
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