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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JAN1N5196/TRDIODE GEN PURP 225V 100MA DO35 Microchip Technology |
2,436 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Tape & Reel (TR) | Active | Standard | 225 V | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 1 µA @ 250 V | - | 100mA | Military | MIL-PRF-19500/118 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
JAN1N5712UR-1/TRDIODE SCHOTTKY 16V 75MA DO213AA Microchip Technology |
9,200 | - |
|
数据表 |
- | DO-213AA | Tape & Reel (TR) | Active | Schottky | 16 V | 1 V @ 35 mA | Small Signal =< 200mA (Io), Any Speed | - | 150 nA @ 16 V | 2pF @ 0V, 1MHz | 75mA | Military | MIL-PRF-19500/444 | Surface Mount | DO-213AA | -65°C ~ 150°C |
|
|
JANTXV1N5553USDIODE GEN PURP 800V 3A B SQ-MELF Microchip Technology |
9,867 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 800 V | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | - | - | 3A | Military | MIL-PRF-19500/420 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
1N6074USDIODE GEN PURP 100V 3A D-5A Microchip Technology |
9,257 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 100 V | 2.04 V @ 9.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 1 µA @ 100 V | - | 3A | - | - | Surface Mount | D-5A | -65°C ~ 155°C |
|
|
JAN1N5807URSDIODE GEN PURP 50V 3A B SQ-MELF Microchip Technology |
6,683 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 50 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 60pF @ 10V, 1MHz | 3A | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
|
JAN1N5809URSDIODE GEN PURP 100V 3A B SQ-MELF Microchip Technology |
3,645 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 100 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | 3A | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
|
JAN1N5811URSDIODE GEN PURP 150V 3A B SQ-MELF Microchip Technology |
4,177 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 150 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | 3A | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
JANTX1N5802US/TRDIODE GEN PURP 50V 1A D-5A Microchip Technology |
7,951 | - |
|
数据表 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 50 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 50 V | 25pF @ 10V, 1MHz | 1A | Military | MIL-PRF-19500/477 | Surface Mount | D-5A | -65°C ~ 175°C |
|
|
1N6642UBDIODE GEN PURP UB Microchip Technology |
4,260 | - |
|
数据表 |
- | 4-SMD, No Lead | Bulk | Active | Standard | - | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | - | 5pF @ 0V, 1MHz | - | - | - | Surface Mount | UB | - |
|
JANTX1N6628/TRDIODE GEN PURP 660V 1.75A Microchip Technology |
7,635 | - |
|
数据表 |
- | E, Axial | Tape & Reel (TR) | Active | Standard | 660 V | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 660 V | 40pF @ 10V, 1MHz | 1.75A | Military | MIL-PRF-19500/590 | Through Hole | - | -65°C ~ 150°C |
