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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UES1102SMDIODE GEN PURP 100V 2.5A A-MELF Microchip Technology |
90 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 100 V | - | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 100 V | 3.5pF @ 6V, 1MHz | 2.5A | - | - | Surface Mount | A-MELF | 150°C (Max) |
|
JANS1N5806DIODE GEN PURP 150V 1A AXIAL Microchip Technology |
18 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 150 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | 1A | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
|
1N3647DIODE GEN PURP 250MA S AXIAL Microchip Technology |
8,354 | - |
|
数据表 |
- | S, Axial | Bulk | Active | Standard | - | 5 V @ 250 mA | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 3000 V | - | 250mA | - | - | Through Hole | S, Axial | -65°C ~ 150°C |
|
|
1N3647ADIODE GP 2100V 250MA S AXIAL Microchip Technology |
6,168 | - |
|
数据表 |
- | S, Axial | Bulk | Active | Standard | 2100 V | 5 V @ 250 mA | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 21000 V | - | 250mA | - | - | Through Hole | S, Axial | -65°C ~ 175°C |
|
JANTX1N6627DIODE GEN PURP 440V 1.75A AXIAL Microchip Technology |
9,144 | - |
|
数据表 |
- | E, Axial | Bulk | Active | Standard | 440 V | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 440 V | 40pF @ 10V, 1MHz | 1.75A | Military | MIL-PRF-19500/590 | Through Hole | - | -65°C ~ 150°C |
|
JANTX1N6627/TRDIODE GEN PURP 440V 1.75A Microchip Technology |
6,903 | - |
|
数据表 |
- | E, Axial | Tape & Reel (TR) | Active | Standard | 440 V | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 440 V | 40pF @ 10V, 1MHz | 1.75A | Military | MIL-PRF-19500/590 | Through Hole | - | -65°C ~ 150°C |
|
|
JANTX1N6624DIODE GEN PURP 990V 1A AXIAL Microchip Technology |
2,715 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 990 V | 1.55 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 500 nA @ 990 V | 10pF @ 10V, 1MHz | 1A | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
|
|
1N6549DIODE RECT ULT FAST REC A-PKG Microchip Technology |
4,323 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
JANTXV1N5552DIODE GEN PURP 600V 5A AXIAL Microchip Technology |
3,467 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 600 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 600 V | - | 5A | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTXV1N5552/TRDIODE GEN PURP 600V 5A Microchip Technology |
2,369 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 600 V | - | 5A | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
