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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANTX1N6622U/TR

JANTX1N6622U/TR

DIODE GP 660V 1.2A A SQ-MELF

Microchip Technology

9,545 -
JANTX1N6622U/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 660 V 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 500 nA @ 660 V - 1.2A Military MIL-PRF-19500/585 Surface Mount A, SQ-MELF -65°C ~ 150°C
1N5821US

1N5821US

DIODE SCHOTTKY 30V 3A B SQ-MELF

Microchip Technology

9,741 -
1N5821US

数据表

- SQ-MELF, B Bulk Discontinued at Digi-Key Schottky 30 V 500 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 30 V - 3A - - Surface Mount B, SQ-MELF -65°C ~ 125°C
JANTXV1N5622US

JANTXV1N5622US

DIODE GEN PURP 1KV 1A D-5A

Microchip Technology

6,823 -
JANTXV1N5622US

数据表

- SQ-MELF, A Bulk Active Standard 1000 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 1000 V - 1A Military MIL-PRF-19500/427 Surface Mount D-5A -65°C ~ 200°C
JANTXV1N5622US/TR

JANTXV1N5622US/TR

DIODE GEN PURP 1KV 1A D-5A

Microchip Technology

4,599 -
JANTXV1N5622US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 1000 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 1 V - 1A Military MIL-PRF-19500/427 Surface Mount D-5A -65°C ~ 200°C
1N6540/TR

1N6540/TR

RECTIFIER UFR,FRR

Microchip Technology

2,846 -
1N6540/TR

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - -
JANS1N6642/TR

JANS1N6642/TR

DIODE GEN PURP 75V 300MA

Microchip Technology

2,645 -
JANS1N6642/TR

数据表

- DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard 75 V 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz 300mA Military MIL-PRF-19500/578 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
1N5821US/TR

1N5821US/TR

DIODE SCHOTTKY 30V 3A B SQ-MELF

Microchip Technology

2,688 -
1N5821US/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Schottky 30 V 500 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 30 V - 3A - - Surface Mount B, SQ-MELF -65°C ~ 125°C
1N5820USE3

1N5820USE3

DIODE SCHOTTKY 20V 3A SQ-MELF B

Microchip Technology

3,506 -
1N5820USE3

数据表

- SQ-MELF, B Bulk Active Schottky 20 V 500 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 20 V - 3A - - Surface Mount B, SQ-MELF -65°C ~ 125°C
1N5811E3

1N5811E3

DIODE GEN PURP 150V 3A B AXIAL

Microchip Technology

88 -
1N5811E3

数据表

- B, Axial Bulk Active Standard 150 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz 3A - - Through Hole B, Axial -65°C ~ 175°C
JAN1N5711UR-1/TR

JAN1N5711UR-1/TR

DIODE SCHOTTKY 70V 33MA DO213AA

Microchip Technology

100 -
JAN1N5711UR-1/TR

数据表

- DO-213AA Tape & Reel (TR) Active Schottky 70 V 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz 33mA Military MIL-PRF-19500/444 Surface Mount DO-213AA -65°C ~ 150°C
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