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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
S3480

S3480

DIODE GEN PURP 800V 45A DO203AB

Microchip Technology

10 -
S3480

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard 800 V 1.15 V @ 90 A Fast Recovery =< 500ns, > 200mA (Io) - 10 µA @ 800 V - 45A - - Stud Mount DO-203AB (DO-5) -65°C ~ 200°C
JANTX1N3070-1

JANTX1N3070-1

DIODE GEN PURP 175V 100MA DO7

Microchip Technology

3 -
JANTX1N3070-1

数据表

- DO-204AA, DO-7, Axial Bulk Active Standard 175 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 50 ns 100 nA @ 175 V - 100mA Military MIL-PRF-19500/169 Through Hole DO-7 -65°C ~ 175°C
CDS5711UR-1

CDS5711UR-1

DIODE SCHOTTKY DO-213AA

Microchip Technology

23 -
CDS5711UR-1

数据表

* - Bulk Active - - - - - - - - - - - - -
JANTX1N6663

JANTX1N6663

DIODE GEN PURP 600V 500MA DO35

Microchip Technology

2 -
JANTX1N6663

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 600 V 1 V @ 400 mA Fast Recovery =< 500ns, > 200mA (Io) - 50 nA @ 600 V - 500mA Military MIL-PRF-19500/587 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANTX1N6779

JANTX1N6779

DIODE GEN PURP 600V 15A TO257

Microchip Technology

17 -
JANTX1N6779

数据表

- TO-257-3 Bulk Active Standard 600 V 1.6 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 10 µA @ 480 V 300pF @ 5V, 1MHz 15A Military MIL-PRF-19500/647 Through Hole TO-257 150°C (Max)
JAN1N3174

JAN1N3174

DIODE GP 1KV 300A DO205AB DO9

Microchip Technology

3 -
JAN1N3174

数据表

- DO-205AB, DO-9, Stud Bulk Active Standard 1000 V 1.55 V @ 940 A Fast Recovery =< 500ns, > 200mA (Io) - 10 mA @ 1000 V - 300A Military MIL-PRF-19500/211 Chassis, Stud Mount DO-205AB (DO-9) -65°C ~ 200°C
JAN1N5712UR-1

JAN1N5712UR-1

DIODE SCHOTTKY 16V 75MA DO213AA

Microchip Technology

4,712 -
JAN1N5712UR-1

数据表

- DO-213AA Bulk Active Schottky 16 V 1 V @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 2pF @ 0V, 1MHz 75mA Military MIL-PRF-19500/444 Surface Mount DO-213AA -65°C ~ 150°C
JAN1N5196

JAN1N5196

DIODE GEN PURP 225V 100MA DO35

Microchip Technology

5,844 -
JAN1N5196

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 225 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 1 µA @ 250 V - 100mA Military MIL-PRF-19500/118 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANTX1N6624/TR

JANTX1N6624/TR

DIODE GEN PURP 990V 1A

Microchip Technology

9,408 -
JANTX1N6624/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 990 V 1.55 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 500 nA @ 990 V 10pF @ 10V, 1MHz 1A Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
JANTX1N5802US

JANTX1N5802US

DIODE GEN PURP 50V 1A D-5A

Microchip Technology

8,327 -
JANTX1N5802US

数据表

- SQ-MELF, A Bulk Active Standard 50 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz 1A Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
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