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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTXV1N6622/TRDIODE GEN PURP 660V 1.2A Microchip Technology |
3,019 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 660 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 660 V | - | 1.2A | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
|
|
JANTXV1N6625/TRDIODE GEN PURP 1.1KV 1A A-PAK Microchip Technology |
3,393 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 1100 V | 1.75 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 1 µA @ 1100 V | - | 1A | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
|
|
JANTXV1N6623/TRDIODE GEN PURP 880V 1A A-PAK Microchip Technology |
5,908 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 880 V | 1.55 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 500 nA @ 880 V | - | 1A | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
|
|
JANTXV1N6621/TRDIODE GEN PURP 440V 1.2A Microchip Technology |
9,364 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 440 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 440 V | - | 1.2A | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
|
|
JANTXV1N6627/TRDIODE GEN PURP 440V 1.75A Microchip Technology |
3,094 | - |
|
数据表 |
- | E, Axial | Tape & Reel (TR) | Active | Standard | 440 V | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 440 V | 40pF @ 10V, 1MHz | 1.75A | Military | MIL-PRF-19500/590 | Through Hole | - | -65°C ~ 150°C |
|
JANTX1N6627USDIODE GEN PURP 440V 1.75A D-5B Microchip Technology |
9,380 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Active | Standard | 440 V | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 440 V | 40pF @ 10V, 1MHz | 1.75A | Military | MIL-PRF-19500/590 | Surface Mount | D-5B | -65°C ~ 150°C |
|
JANTXV1N6621USDIODE GEN PURP 440V 1.2A D-5A Microchip Technology |
3,618 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 440 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 440 V | - | 1.2A | Military | MIL-PRF-19500/585 | Surface Mount | D-5A | -65°C ~ 150°C |
|
|
JANTXV1N6623USDIODE GEN PURP 880V 1A D-5A Microchip Technology |
3,951 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 880 V | 1.55 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 500 nA @ 880 V | - | 1A | Military | MIL-PRF-19500/585 | Surface Mount | D-5A | -65°C ~ 150°C |
|
1N5614DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
8,128 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 200 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 200 V | - | 1A | - | - | Through Hole | A, Axial | -65°C ~ 200°C |
|
JANTX1N5618DIODE GEN PURP 600V 1A AXIAL Microchip Technology |
2 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 600 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 600 V | - | 1A | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |
