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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N6075US

1N6075US

DIODE GEN PURP 150V 3A D-5A

Microchip Technology

8,965 -
1N6075US

数据表

- SQ-MELF, A Bulk Active Standard 150 V 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 150 V - 3A - - Surface Mount D-5A -65°C ~ 155°C
1N6625E3

1N6625E3

DIODE GEN PURP 1.1KV 1A A AXIAL

Microchip Technology

3,021 -
1N6625E3

数据表

- A, Axial Bulk Discontinued at Digi-Key Standard 1100 V 1.95 V @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 1 µA @ 1000 V - 1A - - Through Hole A, Axial -65°C ~ 150°C
JANTX1N6075

JANTX1N6075

DIODE GEN PURP 150V 850MA A-PAK

Microchip Technology

6,755 -
JANTX1N6075

数据表

- A, Axial Bulk Active Standard 150 V 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 150 V - 850mA Military MIL-PRF-19500/503 Through Hole A-PAK -65°C ~ 155°C
JANTXV1N6623

JANTXV1N6623

DIODE GEN PURP 880V 1A A-PAK

Microchip Technology

2,482 -
JANTXV1N6623

数据表

- A, Axial Bulk Active Standard 880 V 1.55 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 500 nA @ 880 V - 1A Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
1N6075US/TR

1N6075US/TR

DIODE GEN PURP 150V 3A D-5A

Microchip Technology

7,391 -
1N6075US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 150 V 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 150 V - 3A - - Surface Mount D-5A -65°C ~ 155°C
JANTX1N4148UR-1

JANTX1N4148UR-1

DIODE GEN PURP 75V 200MA DO213AA

Microchip Technology

4,141 -
JANTX1N4148UR-1

数据表

- DO-213AA Bulk Active Standard 75 V 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 20 ns 500 nA @ 75 V 4pF @ 0V, 1MHz 200mA Military MIL-PRF-19500/116 Surface Mount DO-213AA -65°C ~ 175°C
JANTXV1N6625

JANTXV1N6625

DIODE GEN PURP 1.1KV 1A A-PAK

Microchip Technology

3,510 -
JANTXV1N6625

数据表

- A, Axial Bulk Discontinued at Digi-Key Standard 1100 V 1.75 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 1 µA @ 1100 V - 1A Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
JANTXV1N6627

JANTXV1N6627

DIODE GEN PURP 440V 1.75A AXIAL

Microchip Technology

9,379 -
JANTXV1N6627

数据表

- E, Axial Bulk Discontinued at Digi-Key Standard 440 V 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 440 V 40pF @ 10V, 1MHz 1.75A Military MIL-PRF-19500/590 Through Hole - -65°C ~ 150°C
JANTXV1N6622

JANTXV1N6622

DIODE GEN PURP 660V 1.2A AXIAL

Microchip Technology

2,365 -
JANTXV1N6622

数据表

- A, Axial Bulk Discontinued at Digi-Key Standard 660 V 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 660 V - 1.2A Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
JANTX1N6075/TR

JANTX1N6075/TR

DIODE GEN PURP 150V 850MA A-PAK

Microchip Technology

5,686 -
JANTX1N6075/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 150 V 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 150 V - 850mA Military MIL-PRF-19500/503 Through Hole A-PAK -65°C ~ 155°C
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