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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N5806

1N5806

DIODE GEN PURP 150V 1A A AXIAL

Microchip Technology

6,263 -
1N5806

数据表

- A, Axial Bulk Active Standard 150 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz 1A - - Through Hole A, Axial -65°C ~ 175°C
1N5416

1N5416

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology

4,931 -
1N5416

数据表

- B, Axial Bulk Active Standard 100 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 100 V - 3A - - Through Hole B, Axial -65°C ~ 175°C
JANTX1N5811

JANTX1N5811

DIODE GEN PURP 150V 3A AXIAL

Microchip Technology

22 -
JANTX1N5811

数据表

- B, Axial Bulk Active Standard 150 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V - 3A Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
1N6640US

1N6640US

DIODE GEN PURP 75V 300MA D-5D

Microchip Technology

2,544 -
1N6640US

数据表

- SQ-MELF, D Bulk Active Standard 75 V 1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 50 V - 300mA - - Surface Mount D-5D -65°C ~ 175°C
1N6677UR-1

1N6677UR-1

DIODE SCHOTTKY 40V 200MA DO213AA

Microchip Technology

7,120 -
1N6677UR-1

数据表

- DO-213AA Bulk Active Schottky 40 V 500 mV @ 200 mA Small Signal =< 200mA (Io), Any Speed - 5 µA @ 40 V 50pF @ 0V, 1MHz 200mA - - Surface Mount DO-213AA -65°C ~ 125°C
JANTX1N6626U

JANTX1N6626U

DIODE GEN PURP 200V 1.75A D-5A

Microchip Technology

8,584 -
JANTX1N6626U

数据表

- SQ-MELF, A Bulk Active Standard 200 V 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 200 V - 1.75A Military MIL-PRF-19500/590 Surface Mount D-5A -65°C ~ 150°C
JANTX1N6627U

JANTX1N6627U

DIODE GEN PURP 400V 1.75A D-5B

Microchip Technology

2,945 -
JANTX1N6627U

数据表

- SQ-MELF, E Bulk Active Standard 400 V 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 400 V - 1.75A Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JANTXV1N6621

JANTXV1N6621

DIODE GEN PURP 440V 1.2A AXIAL

Microchip Technology

2,976 -
JANTXV1N6621

数据表

- A, Axial Bulk Active Standard 440 V 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 440 V - 1.2A Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
JANTXV1N6074

JANTXV1N6074

DIODE GP 100V 850MA A AXIAL

Microchip Technology

8,373 -
JANTXV1N6074

数据表

- A, Axial Bulk Active Standard 100 V 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 100 V - 850mA Military MIL-PRF-19500/503 Through Hole A, Axial -65°C ~ 155°C
JANTXV1N6075

JANTXV1N6075

DIODE GEN PURP 150V 850MA A-PAK

Microchip Technology

3,958 -
JANTXV1N6075

数据表

- A, Axial Bulk Active Standard 150 V 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 150 V - 850mA Military MIL-PRF-19500/503 Through Hole A, Axial -65°C ~ 155°C
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