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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANTX1N6073

JANTX1N6073

DIODE GEN PURP 50V 850MA A-PAK

Microchip Technology

2,160 -
JANTX1N6073

数据表

- A, Axial Bulk Active Standard 50 V 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 50 V - 850mA Military MIL-PRF-19500/503 Through Hole A-PAK -65°C ~ 155°C
JANTXV1N3595UR-1

JANTXV1N3595UR-1

DIODE GP 125V 150MA DO213AA

Microchip Technology

5,524 -
JANTXV1N3595UR-1

数据表

- DO-213AA Bulk Discontinued at Digi-Key Standard 125 V 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V - 150mA Military MIL-PRF-19500/241 Surface Mount DO-213AA -65°C ~ 175°C
JANTX1N6622US

JANTX1N6622US

DIODE GEN PURP 660V 2A D-5A

Microchip Technology

5,137 -
JANTX1N6622US

数据表

- SQ-MELF, A Bulk Active Standard 660 V 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 660 V 10pF @ 10V, 1MHz 2A Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
JANTX1N6622U

JANTX1N6622U

DIODE GEN PURP 600V 1.2A D-5A

Microchip Technology

6,259 -
JANTX1N6622U

数据表

- SQ-MELF, A Bulk Active Standard 600 V 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 600 V - 1.2A Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
JANTXV1N3595UR-1/TR

JANTXV1N3595UR-1/TR

DIODE GP 125V 150MA DO213AA

Microchip Technology

8,652 -
JANTXV1N3595UR-1/TR

数据表

- DO-213AA Tape & Reel (TR) Active Standard 125 V 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V - 150mA Military MIL-PRF-19500/241 Surface Mount DO-213AA -65°C ~ 175°C
UES1105E3

UES1105E3

DIODE GEN PURP 300V 1A A AXIAL

Microchip Technology

2,055 -
UES1105E3

数据表

- Axial Bulk Active Standard 300 V 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 300 V - 1A - - Through Hole A, Axial -55°C ~ 150°C
UES1105E3/TR

UES1105E3/TR

DIODE GEN PURP 300V 1A A AXIAL

Microchip Technology

9,470 -
UES1105E3/TR

数据表

- Axial Tape & Reel (TR) Active Standard 300 V 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 300 V - 1A - - Through Hole A, Axial -55°C ~ 150°C
1N6540

1N6540

DIODE RECT ULT FAST REC A-PKG

Microchip Technology

7,185 -
1N6540

数据表

* - Bulk Active - - - - - - - - - - - - -
1N6625E3/TR

1N6625E3/TR

DIODE GEN PURP 1.1KV 1A A AXIAL

Microchip Technology

5,514 -
1N6625E3/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 1100 V 1.95 V @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 1 µA @ 1100 V - 1A - - Through Hole A, Axial -65°C ~ 150°C
JANTX1N6622US/TR

JANTX1N6622US/TR

DIODE GEN PURP 660V 2A D-5A

Microchip Technology

4,018 -
JANTX1N6622US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 660 V 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 660 V 10pF @ 10V, 1MHz 2A Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
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