| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTX1N6073DIODE GEN PURP 50V 850MA A-PAK Microchip Technology |
2,160 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 50 V | 2.04 V @ 9.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 1 µA @ 50 V | - | 850mA | Military | MIL-PRF-19500/503 | Through Hole | A-PAK | -65°C ~ 155°C |
|
JANTXV1N3595UR-1DIODE GP 125V 150MA DO213AA Microchip Technology |
5,524 | - |
|
数据表 |
- | DO-213AA | Bulk | Discontinued at Digi-Key | Standard | 125 V | 920 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 2 nA @ 125 V | - | 150mA | Military | MIL-PRF-19500/241 | Surface Mount | DO-213AA | -65°C ~ 175°C |
|
JANTX1N6622USDIODE GEN PURP 660V 2A D-5A Microchip Technology |
5,137 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 660 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 660 V | 10pF @ 10V, 1MHz | 2A | Military | MIL-PRF-19500/585 | Surface Mount | D-5A | -65°C ~ 150°C |
|
JANTX1N6622UDIODE GEN PURP 600V 1.2A D-5A Microchip Technology |
6,259 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 600 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 600 V | - | 1.2A | Military | MIL-PRF-19500/585 | Surface Mount | D-5A | -65°C ~ 150°C |
|
JANTXV1N3595UR-1/TRDIODE GP 125V 150MA DO213AA Microchip Technology |
8,652 | - |
|
数据表 |
- | DO-213AA | Tape & Reel (TR) | Active | Standard | 125 V | 920 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 2 nA @ 125 V | - | 150mA | Military | MIL-PRF-19500/241 | Surface Mount | DO-213AA | -65°C ~ 175°C |
|
UES1105E3DIODE GEN PURP 300V 1A A AXIAL Microchip Technology |
2,055 | - |
|
数据表 |
- | Axial | Bulk | Active | Standard | 300 V | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 300 V | - | 1A | - | - | Through Hole | A, Axial | -55°C ~ 150°C |
|
UES1105E3/TRDIODE GEN PURP 300V 1A A AXIAL Microchip Technology |
9,470 | - |
|
数据表 |
- | Axial | Tape & Reel (TR) | Active | Standard | 300 V | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 300 V | - | 1A | - | - | Through Hole | A, Axial | -55°C ~ 150°C |
|
1N6540DIODE RECT ULT FAST REC A-PKG Microchip Technology |
7,185 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
1N6625E3/TRDIODE GEN PURP 1.1KV 1A A AXIAL Microchip Technology |
5,514 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 1100 V | 1.95 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 1 µA @ 1100 V | - | 1A | - | - | Through Hole | A, Axial | -65°C ~ 150°C |
|
JANTX1N6622US/TRDIODE GEN PURP 660V 2A D-5A Microchip Technology |
4,018 | - |
|
数据表 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 660 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 660 V | 10pF @ 10V, 1MHz | 2A | Military | MIL-PRF-19500/585 | Surface Mount | D-5A | -65°C ~ 150°C |