富聪科技订单满¥1000免运费
关注我们:

单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N6661US/TR

1N6661US/TR

DIODE GEN PURP 225V A SQ-MELF

Microchip Technology

5,203 -
1N6661US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 225 V 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 225 V - - - - Surface Mount A, SQ-MELF -65°C ~ 175°C
JANTXV1N5190

JANTXV1N5190

DIODE GEN PURP 600V 3A AXIAL

Microchip Technology

3,425 -
JANTXV1N5190

数据表

- B, Axial Bulk Active Standard 600 V 1.5 V @ 9 A Standard Recovery >500ns, > 200mA (Io) - 2 µA @ 600 V - 3A Military MIL-PRF-19500/297 Through Hole B, Axial -65°C ~ 175°C
JANTXV1N5417US/TR

JANTXV1N5417US/TR

DIODE GEN PURP 200V 3A D-5B

Microchip Technology

7,516 -
JANTXV1N5417US/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 200 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - 3A Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
JANTXV1N5550US/TR

JANTXV1N5550US/TR

DIODE GEN PURP 200V 5A D-5B

Microchip Technology

9,306 -
JANTXV1N5550US/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 200 V 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V - 5A Military MIL-PRF-19500/420 Surface Mount D-5B -65°C ~ 175°C
JANTXV1N5418US/TR

JANTXV1N5418US/TR

DIODE GEN PURP 400V 3A D-5B

Microchip Technology

5,984 -
JANTXV1N5418US/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 400 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V - 3A Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
JANTXV1N5617US

JANTXV1N5617US

DIODE GEN PURP 400V 1A D-5A

Microchip Technology

4,046 -
JANTXV1N5617US

数据表

- SQ-MELF, A Bulk Active Standard 400 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 400 V - 1A Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
JANTXV1N5617US/TR

JANTXV1N5617US/TR

DIODE GEN PURP 400V 1A D-5A

Microchip Technology

2,233 -
JANTXV1N5617US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 400 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 400 V - 1A Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
JAN1N3645

JAN1N3645

DIODE GP 1.4KV 250MA S AXIAL

Microchip Technology

5,026 -
JAN1N3645

数据表

- S, Axial Bulk Active Standard 1400 V 5 V @ 250 mA Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1400 V - 250mA Military MIL-PRF-19500/279 Through Hole S, Axial -65°C ~ 175°C
JAN1N3646

JAN1N3646

DIODE GP 1.75KV 250MA S AXIAL

Microchip Technology

8,434 -
JAN1N3646

数据表

- S, Axial Bulk Active Standard 1750 V 5 V @ 250 mA Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1750 V - 250mA Military MIL-PRF-19500/279 Through Hole S, Axial -65°C ~ 175°C
1N4254

1N4254

RECTIFIER DIODE

Microchip Technology

9,093 -
1N4254

数据表

- S, Axial Bulk Active Standard 1500 V 3.5 V @ 100 mA Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 1500 V - 250mA - - Through Hole S, Axial -65°C ~ 175°C
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户