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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANHCE1N5804

JANHCE1N5804

DIODE GEN PURP 100V 1A DIE

Microchip Technology

9,345 -
JANHCE1N5804

数据表

- Die Bulk Active Standard 100 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz 1A Military MIL-PRF-19500/477 Surface Mount Die -65°C ~ 175°C
JANHCE1N5802

JANHCE1N5802

DIODE GEN PURP 50V 1A DIE

Microchip Technology

7,527 -
JANHCE1N5802

数据表

- Die Bulk Active Standard 50 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz 1A Military MIL-PRF-19500/561 Surface Mount Die -65°C ~ 175°C
JANTX1N6621US/TR

JANTX1N6621US/TR

DIODE GEN PURP 440V 2A D-5A

Microchip Technology

7,600 -
JANTX1N6621US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 440 V 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 440 V 10pF @ 10V, 1MHz 2A Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
JANTX1N6621U/TR

JANTX1N6621U/TR

DIODE GP 440V 1.2A A SQ-MELF

Microchip Technology

5,418 -
JANTX1N6621U/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 440 V 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 500 nA @ 440 V - 1.2A Military MIL-PRF-19500/585 Surface Mount A, SQ-MELF -65°C ~ 150°C
JANTXV1N5417US

JANTXV1N5417US

DIODE GEN PURP 200V 3A D-5B

Microchip Technology

5,174 -
JANTXV1N5417US

数据表

- SQ-MELF, E Bulk Active Standard 200 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - 3A Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
JANTXV1N5418US

JANTXV1N5418US

DIODE GEN PURP 400V 3A D-5B

Microchip Technology

4,240 -
JANTXV1N5418US

数据表

- SQ-MELF, E Bulk Active Standard 400 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V - 3A Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
JANTXV1N5551US/TR

JANTXV1N5551US/TR

DIODE GEN PURP 400V 3A D-5B

Microchip Technology

3,677 -
JANTXV1N5551US/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 400 V 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 400 V - 3A Military MIL-PRF-19500/420 Surface Mount D-5B -65°C ~ 175°C
JANTXV1N5419US/TR

JANTXV1N5419US/TR

UFR,FRR

Microchip Technology

3,665 -
JANTXV1N5419US/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 500 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 µA @ 500 V - 3A Military MIL-PRF-19500/411 Surface Mount B, SQ-MELF -65°C ~ 175°C
1N6661US

1N6661US

DIODE GEN PURP 225V A SQ-MELF

Microchip Technology

5,483 -
1N6661US

数据表

- SQ-MELF, A Bulk Active Standard 225 V 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 225 V - - - - Surface Mount A, SQ-MELF -65°C ~ 175°C
1N6662US/TR

1N6662US/TR

DIODE GP 400V 500MA A SQ-MELF

Microchip Technology

9,531 -
1N6662US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 400 V 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 400 V - 500mA - - Surface Mount A, SQ-MELF -65°C ~ 175°C
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