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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N3644DIODE GEN PURP S AXIAL Microchip Technology |
6,237 | - |
|
数据表 |
- | S, Axial | Bulk | Active | Standard | - | 5 V @ 250 mA | Standard Recovery >500ns, > 200mA (Io) | - | - | - | - | - | - | Through Hole | S, Axial | -65°C ~ 175°C |
|
|
UES1103E3DIODE GEN PURP 150V 2.5A A AXIAL Microchip Technology |
5,096 | - |
|
数据表 |
- | Axial | Bulk | Active | Standard | 150 V | 975 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 150 V | - | 2.5A | - | - | Through Hole | A, Axial | 175°C |
|
|
JANTX1N6621DIODE GEN PURP 440V 2A AXIAL Microchip Technology |
4,771 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 440 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 440 V | 10pF @ 10V, 1MHz | 2A | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
|
1N5820US/TRDIODE SCHOTTKY 20V 3A B SQ-MELF Microchip Technology |
6,569 | - |
|
数据表 |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Schottky | 20 V | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 20 V | - | 3A | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 125°C |
|
JANTX1N6621/TRDIODE GEN PURP 440V 2A Microchip Technology |
8,532 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 440 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 440 V | 10pF @ 10V, 1MHz | 2A | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
|
|
JANTXV1N5550USDIODE GEN PURP 200V 5A D-5B Microchip Technology |
4,954 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Active | Standard | 200 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 200 V | - | 5A | Military | MIL-PRF-19500/420 | Surface Mount | D-5B | -65°C ~ 175°C |
|
|
JANTXV1N5419USDIODE GEN PURP 500V 3A D-5B Microchip Technology |
5,172 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Active | Standard | 500 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 500 V | - | 3A | Military | MIL-PRF-19500/411 | Surface Mount | D-5B | -65°C ~ 175°C |
|
|
JANTXV1N5551USDIODE GEN PURP 400V 3A D-5B Microchip Technology |
9,001 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Active | Standard | 400 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 400 V | - | 3A | Military | MIL-PRF-19500/420 | Surface Mount | D-5B | -65°C ~ 175°C |
|
|
UES1103E3/TRDIODE GEN PURP 150V 2.5A A AXIAL Microchip Technology |
3,488 | - |
|
数据表 |
- | Axial | Tape & Reel (TR) | Active | Standard | 150 V | 975 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 150 V | - | 2.5A | - | - | Through Hole | A, Axial | 175°C |
|
|
1N6662USRECTIFIER DIODE Microchip Technology |
9,732 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 400 V | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 400 V | - | 500mA | - | - | Surface Mount | A, SQ-MELF | -65°C ~ 175°C |
