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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N6073/TR

1N6073/TR

DIODE GEN PURP 50V 850MA

Microchip Technology

7,621 -
1N6073/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 50 V 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 50 V - 850mA - - Through Hole A, Axial -65°C ~ 155°C
1N6074/TR

1N6074/TR

DIODE GEN PURP 100V 850MA

Microchip Technology

2,919 -
1N6074/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 100 V 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 100 V - 850mA - - Through Hole A, Axial -65°C ~ 155°C
JANTXV1N5819-1

JANTXV1N5819-1

DIODE SCHOTTKY 45V 1A DO41

Microchip Technology

5,385 -
JANTXV1N5819-1

数据表

- DO-204AL, DO-41, Axial Bulk Active Schottky 45 V 490 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V 70pF @ 5V, 1MHz 1A Military MIL-PRF-19500/586 Through Hole DO-41 -65°C ~ 125°C
JANHCE1N5806

JANHCE1N5806

DIODE GEN PURP 150V 1A DIE

Microchip Technology

5,696 -
JANHCE1N5806

数据表

- Die Bulk Active Standard 150 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz 1A - - Surface Mount Die -65°C ~ 175°C
1N6539/TR

1N6539/TR

RECTIFIER UFR,FRR

Microchip Technology

2,323 -
1N6539/TR

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - -
JANTX1N6621US

JANTX1N6621US

DIODE GEN PURP 440V 2A D-5A

Microchip Technology

8,527 -
JANTX1N6621US

数据表

- SQ-MELF, A Bulk Active Standard 440 V 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 440 V 10pF @ 10V, 1MHz 2A Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
JANTX1N6621U

JANTX1N6621U

DIODE GEN PURP 400V 1.2A D-5A

Microchip Technology

9,666 -
JANTX1N6621U

数据表

- SQ-MELF, A Bulk Active Standard 400 V 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 400 V - 1.2A Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
JANTXV1N5819-1/TR

JANTXV1N5819-1/TR

DIODE SCHOTTKY 45V 1A DO41

Microchip Technology

4,751 -
JANTXV1N5819-1/TR

数据表

- DO-204AL, DO-41, Axial Tape & Reel (TR) Active Schottky 45 V 490 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V 70pF @ 5V, 1MHz 1A Military MIL-PRF-19500/586 Through Hole DO-41 -65°C ~ 125°C
1N3643

1N3643

DIODE GP 1KV 250MA S AXIAL

Microchip Technology

3,526 -
1N3643

数据表

- S, Axial Bulk Active Standard 1000 V 5 V @ 250 mA Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1000 V - 250mA - - Through Hole S, Axial -65°C ~ 175°C
1N3645

1N3645

DIODE GP 1.4KV 250MA S AXIAL

Microchip Technology

5,363 -
1N3645

数据表

- S, Axial Bulk Active Standard 1400 V 5 V @ 250 mA Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1400 V - 250mA - - Through Hole S, Axial -65°C ~ 175°C
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