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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANTXV1N5811/TR

JANTXV1N5811/TR

DIODE GEN PURP 150V 3A

Microchip Technology

3,518 -
JANTXV1N5811/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 150 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 65pF @ 10V, 1MHz 3A Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
JANTXV1N5809/TR

JANTXV1N5809/TR

DIODE GEN PURP 100V 3A

Microchip Technology

3,098 -
JANTXV1N5809/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 100 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 65pF @ 10V, 1MHz 3A Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
JANTXV1N5807/TR

JANTXV1N5807/TR

DIODE GEN PURP 50V 3A

Microchip Technology

2,938 -
JANTXV1N5807/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 50 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 65pF @ 10V, 1MHz 3A Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
1N6073

1N6073

DIODE GEN PURP 50V 850MA AXIAL

Microchip Technology

3,397 -
1N6073

数据表

- A, Axial Bulk Discontinued at Digi-Key Standard 50 V 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 50 V - 850mA - - Through Hole A, Axial -65°C ~ 155°C
1N6074

1N6074

DIODE GEN PURP 100V 850MA AXIAL

Microchip Technology

6,172 -
1N6074

数据表

- A, Axial Bulk Active Standard 100 V 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 100 V - 850mA - - Through Hole A, Axial -65°C ~ 155°C
JANTXV1N5621US/TR

JANTXV1N5621US/TR

DIODE GEN PURP 800V 1A D-5A

Microchip Technology

8,832 -
JANTXV1N5621US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 800 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 500 nA @ 800 V 20pF @ 12V, 1MHz 1A Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
1N6539

1N6539

DIODE RECT ULT FAST REC A-PKG

Microchip Technology

6,269 -
1N6539

数据表

* - Bulk Active - - - - - - - - - - - - -
1N5820US

1N5820US

DIODE SCHOTTKY 20V 3A B SQ-MELF

Microchip Technology

6,886 -
1N5820US

数据表

- SQ-MELF, B Bulk Discontinued at Digi-Key Schottky 20 V 500 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 20 V - 3A - - Surface Mount B, SQ-MELF -65°C ~ 125°C
JANTX1N6074

JANTX1N6074

DIODE GEN PURP 100V 850MA A-PAK

Microchip Technology

5,452 -
JANTX1N6074

数据表

- A, Axial Bulk Active Standard 100 V 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 100 V - 850mA Military MIL-PRF-19500/503 Through Hole A-PAK -65°C ~ 155°C
JANTX1N6074/TR

JANTX1N6074/TR

DIODE GEN PURP 100V 850MA A-PAK

Microchip Technology

8,395 -
JANTX1N6074/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 100 V 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 100 V - 850mA Military MIL-PRF-19500/503 Through Hole A-PAK -65°C ~ 155°C
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