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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTX1N6620U/TRDIODE GP 220V 1.2A A SQ-MELF Microchip Technology |
5,868 | - |
|
数据表 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 220 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 500 nA @ 220 V | - | 1.2A | Military | MIL-PRF-19500/585 | Surface Mount | A, SQ-MELF | -65°C ~ 150°C |
|
|
JANTX1N6626DIODE GEN PURP 220V 1.75A AXIAL Microchip Technology |
3,151 | - |
|
数据表 |
- | E, Axial | Bulk | Active | Standard | 220 V | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 220 V | 40pF @ 10V, 1MHz | 1.75A | Military | MIL-PRF-19500/590 | Through Hole | - | -65°C ~ 150°C |
|
1N6075/TRDIODE GEN PURP 150V 850MA Microchip Technology |
9,702 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 150 V | 2.04 V @ 9.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 1 µA @ 150 V | - | 850mA | - | - | Through Hole | A, Axial | -65°C ~ 155°C |
|
|
JANTXV1N5807DIODE GEN PURP 50V 3A AXIAL Microchip Technology |
5,059 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 50 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 65pF @ 10V, 1MHz | 3A | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
JANTXV1N5809DIODE GEN PURP 100V 3A AXIAL Microchip Technology |
2,188 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 100 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 65pF @ 10V, 1MHz | 3A | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
JANTXV1N5811DIODE GEN PURP 150V 3A AXIAL Microchip Technology |
9,762 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 150 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 65pF @ 10V, 1MHz | 3A | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
JANTXV1N5620USDIODE GEN PURP 800V 1A A SQ-MELF Microchip Technology |
8,249 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 800 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | - | - | 1A | Military | MIL-PRF-19500/427 | Surface Mount | A, SQ-MELF | -65°C ~ 200°C |
|
JANTXV1N5621USDIODE GEN PURP 800V 1A D-5A Microchip Technology |
9,957 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Discontinued at Digi-Key | Standard | 800 V | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 500 nA @ 800 V | 20pF @ 12V, 1MHz | 1A | Military | MIL-PRF-19500/429 | Surface Mount | D-5A | -65°C ~ 175°C |
|
JANTXV1N5620US/TRDIODE GEN PURP 800V 1A A SQ-MELF Microchip Technology |
7,038 | - |
|
数据表 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 800 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | - | - | 1A | Military | MIL-PRF-19500/427 | Surface Mount | A, SQ-MELF | -65°C ~ 200°C |
|
|
JANTX1N6626/TRDIODE GEN PURP 220V 1.75A Microchip Technology |
3,322 | - |
|
数据表 |
- | E, Axial | Tape & Reel (TR) | Active | Standard | 220 V | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 220 V | 40pF @ 10V, 1MHz | 1.75A | Military | MIL-PRF-19500/590 | Through Hole | - | -65°C ~ 150°C |
