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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANTX1N6623/TR

JANTX1N6623/TR

DIODE GEN PURP 880V 1A

Microchip Technology

4,020 -
JANTX1N6623/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 880 V 1.55 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 500 nA @ 880 V 10pF @ 10V, 1MHz 1A Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
JANTX1N6623US/TR

JANTX1N6623US/TR

DIODE GEN PURP 880V 1A D-5A

Microchip Technology

8,350 -
JANTX1N6623US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 880 V 1.55 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 500 nA @ 880 V 10pF @ 10V, 1MHz 1A Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
JANTX1N6631/TR

JANTX1N6631/TR

DIODE GEN PURP 2A E AXIAL

Microchip Technology

3,690 -
JANTX1N6631/TR

数据表

- E, Axial Tape & Reel (TR) Active Standard - 1.95 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 4 µA @ 1000 V 40pF @ 10V, 1MHz 2A Military MIL-PRF-19500/590 Through Hole E, Axial -65°C ~ 175°C
JANTX1N6623U/TR

JANTX1N6623U/TR

DIODE GP 800V 1.5A A SQ-MELF

Microchip Technology

7,402 -
JANTX1N6623U/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 800 V 1.8 V @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 500 nA @ 800 V - 1.5A Military MIL-PRF-19500/585 Surface Mount A, SQ-MELF -65°C ~ 175°C
1N6625US/TR

1N6625US/TR

DIODE GEN PURP 1.1KV 1A A-MELF

Microchip Technology

7,939 -
1N6625US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 1100 V 1.75 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 1 µA @ 1100 V 10pF @ 10V, 1MHz 1A - - Surface Mount A-MELF -65°C ~ 150°C
1N6624US/TR

1N6624US/TR

DIODE GEN PURP 990V 1A D-5A

Microchip Technology

7,488 -
1N6624US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 990 V 1.55 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 500 nA @ 900 V - 1A - - Surface Mount D-5A -65°C ~ 150°C
1N6624U/TR

1N6624U/TR

DIODE GP 990V 1A A SQ-MELF

Microchip Technology

3,623 -
1N6624U/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 990 V 1.55 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 500 nA @ 990 V - 1A - - Surface Mount A, SQ-MELF -65°C ~ 150°C
JAN1N6627US

JAN1N6627US

DIODE GEN PURP 440V 1.75A D-5B

Microchip Technology

3,400 -
JAN1N6627US

数据表

- SQ-MELF, E Bulk Discontinued at Digi-Key Standard 440 V 1.35 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 440 V 40pF @ 10V, 1MHz 1.75A Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JANTX1N6620US/TR

JANTX1N6620US/TR

DIODE GEN PURP 220V 2A D-5A

Microchip Technology

2,039 -
JANTX1N6620US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 220 V 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 220 V 10pF @ 10V, 1MHz 2A Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
JANTX1N6630/TR

JANTX1N6630/TR

DIODE GEN PURP 900V 3A E AXIAL

Microchip Technology

5,997 -
JANTX1N6630/TR

数据表

- E, Axial Tape & Reel (TR) Active Standard 900 V 1.7 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 2 µA @ 990 V 40pF @ 10V, 1MHz 3A Military MIL-PRF-19500/590 Through Hole E, Axial -65°C ~ 175°C
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