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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANTX1N6623US

JANTX1N6623US

DIODE GEN PURP 880V 1A D-5A

Microchip Technology

9,041 -
JANTX1N6623US

数据表

- SQ-MELF, A Bulk Active Standard 880 V 1.55 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 500 nA @ 880 V 10pF @ 10V, 1MHz 1A Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
1N6548

1N6548

DIODE RECT ULT FAST REC A-PKG

Microchip Technology

6,713 -
1N6548

数据表

* - Bulk Active - - - - - - - - - - - - -
1N6624US

1N6624US

DIODE GEN PURP 990V 1A A-MELF

Microchip Technology

2,066 -
1N6624US

数据表

- SQ-MELF, A Bulk Discontinued at Digi-Key Standard 990 V 1.55 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 500 nA @ 990 V 10pF @ 10V, 1MHz 1A - - Surface Mount A-MELF -65°C ~ 150°C
1N5822/TR

1N5822/TR

DIODE SCHOTTKY 40V 3A

Microchip Technology

5,608 -
1N5822/TR

数据表

- B, Axial Tape & Reel (TR) Active Schottky 40 V 500 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 40 V - 3A - - Through Hole B, Axial -65°C ~ 125°C
JANTX1N6620US

JANTX1N6620US

DIODE GEN PURP 220V 2A D-5A

Microchip Technology

6,531 -
JANTX1N6620US

数据表

- SQ-MELF, A Bulk Active Standard 220 V 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 220 V 10pF @ 10V, 1MHz 2A Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
JANTX1N6630

JANTX1N6630

DIODE GEN PURP 900V 3A E AXIAL

Microchip Technology

2,358 -
JANTX1N6630

数据表

- E, Axial Bulk Active Standard 900 V 1.7 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 2 µA @ 990 V 40pF @ 10V, 1MHz 3A Military MIL-PRF-19500/590 Through Hole E, Axial -65°C ~ 175°C
JANTX1N6623

JANTX1N6623

DIODE GEN PURP 880V 1A AXIAL

Microchip Technology

3,076 -
JANTX1N6623

数据表

- A, Axial Bulk Active Standard 880 V 1.55 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 500 nA @ 880 V 10pF @ 10V, 1MHz 1A Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
1N6075

1N6075

DIODE GEN PURP 150V 850MA AXIAL

Microchip Technology

6,305 -
1N6075

数据表

- A, Axial Bulk Active Standard 150 V 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 150 V - 850mA - - Through Hole A, Axial -65°C ~ 155°C
JANTX1N6631

JANTX1N6631

DIODE GEN PURP 2A E AXIAL

Microchip Technology

4,300 -
JANTX1N6631

数据表

- E, Axial Bulk Active Standard - 1.95 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 4 µA @ 1000 V 40pF @ 10V, 1MHz 2A Military MIL-PRF-19500/590 Through Hole E, Axial -65°C ~ 175°C
1N6625US

1N6625US

DIODE GEN PURP 1.1KV 1A A-MELF

Microchip Technology

8,584 -
1N6625US

数据表

- SQ-MELF, A Bulk Active Standard 1100 V 1.75 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 1 µA @ 1100 V 10pF @ 10V, 1MHz 1A - - Surface Mount A-MELF -65°C ~ 150°C
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