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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANTXV1N5188

JANTXV1N5188

DIODE GEN PURP 400V 3A AXIAL

Microchip Technology

9,703 -
JANTXV1N5188

数据表

- B, Axial Bulk Active Standard 400 V 1.5 V @ 9 A Standard Recovery >500ns, > 200mA (Io) - 2 µA @ 400 V - 3A Military MIL-PRF-19500/297 Through Hole B, Axial -65°C ~ 175°C
JANTX1N6624US

JANTX1N6624US

DIODE GEN PURP 990V 1A D-5A

Microchip Technology

4,169 -
JANTX1N6624US

数据表

- SQ-MELF, A Bulk Discontinued at Digi-Key Standard 990 V 1.55 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 500 nA @ 990 V 10pF @ 10V, 1MHz 1A Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
JANTXV1N5187

JANTXV1N5187

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology

9,377 -
JANTXV1N5187

数据表

- B, Axial Bulk Discontinued at Digi-Key Standard 100 V 1.5 V @ 9 A Standard Recovery >500ns, > 200mA (Io) - 2 µA @ 100 V - 3A Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
1N6538

1N6538

DIODE RECT ULT FAST REC A-PKG

Microchip Technology

3,769 -
1N6538

数据表

* - Bulk Active - - - - - - - - - - - - -
JANTX1N6624US/TR

JANTX1N6624US/TR

DIODE GEN PURP 990V 1A D-5A

Microchip Technology

9,226 -
JANTX1N6624US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 990 V 1.55 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 500 nA @ 990 V 10pF @ 10V, 1MHz 1A Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
JANTX1N6624U/TR

JANTX1N6624U/TR

DIODE GP 990V 1A A SQ-MELF

Microchip Technology

5,009 -
JANTX1N6624U/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 990 V 1.55 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 500 nA @ 990 V - 1A Military MIL-PRF-19500/585 Surface Mount A, SQ-MELF -65°C ~ 150°C
JANTXV1N5187/TR

JANTXV1N5187/TR

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology

3,367 -
JANTXV1N5187/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 100 V 1.5 V @ 9 A Standard Recovery >500ns, > 200mA (Io) - 2 µA @ 100 V - 3A Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
1N5822G

1N5822G

DIODE SCHOTTKY B

Microchip Technology

7,749 -
1N5822G

数据表

- Axial Bulk Active Schottky - - - - - - - - - Through Hole B -
1N5821

1N5821

DIODE SCHOTTKY 30V 3A B AXIAL

Microchip Technology

4,785 -
1N5821

数据表

- B, Axial Bulk Active Schottky 30 V 500 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 30 V - 3A - - Through Hole B, Axial -65°C ~ 125°C
1N6538/TR

1N6538/TR

RECTIFIER UFR,FRR

Microchip Technology

6,679 -
1N6538/TR

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - -
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