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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N5188

1N5188

DIODE GEN PURP 400V 3A AXIAL

Microchip Technology

6,946 -
1N5188

数据表

- B, Axial Bulk Discontinued at Digi-Key Standard 400 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 2 µA @ 400 V - 3A - - Through Hole B, Axial -65°C ~ 175°C
1N5189

1N5189

DIODE GEN PURP 500V 3A AXIAL

Microchip Technology

6,102 -
1N5189

数据表

- B, Axial Bulk Active Standard 500 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 2 µA @ 500 V - 3A - - Through Hole B, Axial -65°C ~ 175°C
1N5190

1N5190

DIODE GEN PURP 600V 3A AXIAL

Microchip Technology

7,674 -
1N5190

数据表

- B, Axial Bulk Active Standard 600 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 2 µA @ 600 V - 3A - - Through Hole B, Axial -65°C ~ 175°C
1N5194

1N5194

DIODE GEN PURP 70V 200MA DO35

Microchip Technology

2,066 -
1N5194

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 70 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 25 nA @ 70 V - 200mA - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
1N5195

1N5195

DIODE GEN PURP 180V 200MA DO35

Microchip Technology

9,305 -
1N5195

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 180 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 25 nA @ 180 V - 200mA - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
1N5195UR

1N5195UR

DIODE GP 180V 200MA DO213AA

Microchip Technology

6,330 -
1N5195UR

数据表

- DO-213AA Bulk Active Standard 180 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 25 nA @ 180 V - 200mA - - Surface Mount DO-213AA -65°C ~ 175°C
1N5196

1N5196

DIODE GEN PURP 225V 200MA DO35

Microchip Technology

9,736 -
1N5196

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 225 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 25 nA @ 225 V - 200mA - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
1N5420E3

1N5420E3

DIODE GEN PURP 600V 3A B AXIAL

Microchip Technology

3,691 -
1N5420E3

数据表

- B, Axial Bulk Active Standard 600 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns - - 3A - - Through Hole B, Axial -65°C ~ 175°C
JANTXV1N3600

JANTXV1N3600

DIODE 50V 200MA DO7

Microchip Technology

3,245 -
JANTXV1N3600

数据表

- DO-204AA, DO-7, Axial Bulk Active - 50 V 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 4 ns 100 nA @ 50 V - 200mA Military MIL-PRF-19500/231 Through Hole DO-7 -65°C ~ 175°C
JAN1N5617US/TR

JAN1N5617US/TR

DIODE GEN PURP 400V 1A D-5A

Microchip Technology

3,156 -
JAN1N5617US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 400 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 400 V - 1A Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
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