| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1N5188DIODE GEN PURP 400V 3A AXIAL Microchip Technology |
6,946 | - |
|
数据表 |
- | B, Axial | Bulk | Discontinued at Digi-Key | Standard | 400 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 2 µA @ 400 V | - | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
1N5189DIODE GEN PURP 500V 3A AXIAL Microchip Technology |
6,102 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 500 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 2 µA @ 500 V | - | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
1N5190DIODE GEN PURP 600V 3A AXIAL Microchip Technology |
7,674 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 600 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 2 µA @ 600 V | - | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
1N5194DIODE GEN PURP 70V 200MA DO35 Microchip Technology |
2,066 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 70 V | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 25 nA @ 70 V | - | 200mA | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
|
1N5195DIODE GEN PURP 180V 200MA DO35 Microchip Technology |
9,305 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 180 V | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 25 nA @ 180 V | - | 200mA | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
|
1N5195URDIODE GP 180V 200MA DO213AA Microchip Technology |
6,330 | - |
|
数据表 |
- | DO-213AA | Bulk | Active | Standard | 180 V | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 25 nA @ 180 V | - | 200mA | - | - | Surface Mount | DO-213AA | -65°C ~ 175°C |
|
|
1N5196DIODE GEN PURP 225V 200MA DO35 Microchip Technology |
9,736 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 225 V | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 25 nA @ 225 V | - | 200mA | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
1N5420E3DIODE GEN PURP 600V 3A B AXIAL Microchip Technology |
3,691 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 600 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | - | - | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
JANTXV1N3600DIODE 50V 200MA DO7 Microchip Technology |
3,245 | - |
|
数据表 |
- | DO-204AA, DO-7, Axial | Bulk | Active | - | 50 V | 1 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 100 nA @ 50 V | - | 200mA | Military | MIL-PRF-19500/231 | Through Hole | DO-7 | -65°C ~ 175°C |
|
JAN1N5617US/TRDIODE GEN PURP 400V 1A D-5A Microchip Technology |
3,156 | - |
|
数据表 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 400 V | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 400 V | - | 1A | Military | MIL-PRF-19500/429 | Surface Mount | D-5A | -65°C ~ 175°C |