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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANTX1N5819-1/TR

JANTX1N5819-1/TR

DIODE SCHOTTKY 45V 1A DO204AL

Microchip Technology

6,963 -
JANTX1N5819-1/TR

数据表

- DO-204AL, DO-41, Axial Tape & Reel (TR) Active Schottky 45 V 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 45 V 70pF @ 5V, 1MHz 1A Military MIL-PRF-19500/586 Through Hole DO-204AL (DO-41) -65°C ~ 125°C
1N5819/TR

1N5819/TR

DIODE SCHOTTKY 45V 1A DO41

Microchip Technology

7,171 -
1N5819/TR

数据表

- DO-204AL, DO-41, Axial Tape & Reel (TR) Active Schottky 45 V 490 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V 70pF @ 5V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 125°C
JANTX1N3595UR-1/TR

JANTX1N3595UR-1/TR

DIODE GP 125V 150MA DO213AA

Microchip Technology

4,969 -
JANTX1N3595UR-1/TR

数据表

- DO-213AA Tape & Reel (TR) Active Standard 125 V 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - 150mA Military MIL-S-19500-241 Surface Mount DO-213AA -65°C ~ 175°C
1N3611US

1N3611US

DIODE GEN PURP 200V 1A A SQ-MELF

Microchip Technology

9,330 -
1N3611US

数据表

- SQ-MELF, A Bulk Active Standard 200 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 200 V - 1A - - Surface Mount A, SQ-MELF -65°C ~ 175°C
UPR60/TR13

UPR60/TR13

DIODE GEN PURP 600V 2A POWERMITE

Microchip Technology

6,734 -
UPR60/TR13

数据表

- DO-216AA Tape & Reel (TR) Active Standard 600 V 1.6 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 600 V - 2A - - Surface Mount Powermite -55°C ~ 150°C
UPR60/TR7

UPR60/TR7

DIODE GEN PURP 600V 2A POWERMITE

Microchip Technology

6,437 -
UPR60/TR7

数据表

- DO-216AA Tape & Reel (TR) Active Standard 600 V 1.6 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 600 V - 2A - - Surface Mount Powermite -55°C ~ 150°C
1N5623US

1N5623US

DIODE GEN PURP 1KV 1A D-5A

Microchip Technology

4,606 -
1N5623US

数据表

- SQ-MELF, A Bulk Active Standard 1000 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 500 nA @ 1000 V 15pF @ 12V, 1MHz 1A - - Surface Mount D-5A -65°C ~ 175°C
JAN1N5620US

JAN1N5620US

DIODE GEN PURP 800V 1A D-5A

Microchip Technology

3,592 -
JAN1N5620US

数据表

- SQ-MELF, A Bulk Active Standard 800 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 800 V - 1A Military MIL-PRF-19500/427 Surface Mount D-5A -65°C ~ 200°C
1N5190/TR

1N5190/TR

DIODE GEN PURP 600V 3A

Microchip Technology

2,715 -
1N5190/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 600 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 2 µA @ 600 V - 3A - - Through Hole B, Axial -65°C ~ 175°C
1N5186/TR

1N5186/TR

DIODE GEN PURP 100V 3A

Microchip Technology

8,799 -
1N5186/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 100 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 2 µA @ 100 V - 3A - - Through Hole B, Axial -65°C ~ 175°C
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