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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5187/TRDIODE GEN PURP 200V 3A Microchip Technology |
9,851 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 200 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 2 µA @ 200 V | - | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N5195UR/TRDIODE GP 180V 200MA DO213AA Microchip Technology |
4,858 | - |
|
数据表 |
- | DO-213AA | Tape & Reel (TR) | Active | Standard | 180 V | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 25 nA @ 180 V | - | 200mA | - | - | Surface Mount | DO-213AA | -65°C ~ 175°C |
|
|
1N5189/TRDIODE GEN PURP 500V 3A Microchip Technology |
8,736 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 500 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 2 µA @ 500 V | - | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N5420E3/TRDIODE GEN PURP 600V 3A B AXIAL Microchip Technology |
3,106 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | - | - | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
1N5188/TRDIODE GEN PURP 400V 3A Microchip Technology |
3,323 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 2 µA @ 400 V | - | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N5195/TRDIODE GEN PURP 180V 200MA DO35 Microchip Technology |
5,300 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Tape & Reel (TR) | Active | Standard | 180 V | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 25 nA @ 180 V | - | 200mA | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
|
1N6620E3/TRDIODE GEN PURP 200V 1.2A A AXIAL Microchip Technology |
6,529 | - |
|
数据表 |
- | Axial | Tape & Reel (TR) | Active | Standard | 200 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 200 V | - | 1.2A | - | - | Through Hole | A, Axial | -65°C ~ 150°C |
|
|
JAN1N5809USDIODE GEN PURP 100V 6A B SQ-MELF Microchip Technology |
6,745 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 100 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | 6A | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
JAN1N5811USDIODE GEN PURP 150V 6A B SQ-MELF Microchip Technology |
4,141 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 150 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | 6A | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
|
CD1A60DIODE SCHOTTKY 60V 1A DIE Microchip Technology |
9,923 | - |
|
数据表 |
- | Die | Tape & Reel (TR) | Active | Schottky | 60 V | 750 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 60 V | - | 1A | Military | MIL-PRF-19500/586 | Surface Mount | Die | -55°C ~ 125°C |
