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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N5420/TR

1N5420/TR

DIODE GEN PURP 600V 3A B AXIAL

Microchip Technology

4,042 -
1N5420/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 600 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 1 µA @ 600 V - 3A - - Through Hole B, Axial -65°C ~ 175°C
1N6620/TR

1N6620/TR

DIODE GEN PURP 220V 1.2A

Microchip Technology

8,744 -
1N6620/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 220 V 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 220 V 10pF @ 10V, 1MHz 1.2A - - Through Hole A, Axial -65°C ~ 150°C
1N6620E3

1N6620E3

DIODE GEN PURP 200V 1.2A A AXIAL

Microchip Technology

5,594 -
1N6620E3

数据表

- Axial Bulk Active Standard 200 V 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 200 V - 1.2A - - Through Hole A, Axial -65°C ~ 150°C
JANTXV1N5620/TR

JANTXV1N5620/TR

DIODE GEN PURP 800V 1A

Microchip Technology

7,740 -
JANTXV1N5620/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 800 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 800 V - 1A Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
1N6858-1

1N6858-1

SCHOTTKY RECTIFIER

Microchip Technology

2,360 -
1N6858-1

数据表

- DO-204AH, DO-35, Axial Bulk Active Schottky 70 V 650 mV @ 15 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 4.5pF @ 0V, 1MHz 75mA - - Through Hole DO-204AH (DO-35) -65°C ~ 150°C
CD5820

CD5820

DIODE SCHOTTKY 20V 3A DIE

Microchip Technology

6,056 -
CD5820

数据表

- Die Tape & Reel (TR) Active Schottky 20 V 550 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 20 V - 3A - - Surface Mount Die -65°C ~ 125°C
JANTXV1N4249/TR

JANTXV1N4249/TR

DIODE GEN PURP 1KV 1A

Microchip Technology

3,515 -
JANTXV1N4249/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 1000 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 1 V - 1A Military MIL-PRF-19500/286 Through Hole A, Axial -65°C ~ 175°C
MNS1N5819UR-1

MNS1N5819UR-1

DIODE SCHOTTKY 45V 1A DO213AB

Microchip Technology

6,110 -
MNS1N5819UR-1

数据表

- DO-213AB, MELF (Glass) Bulk Active Schottky 45 V 490 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V 70pF @ 5V, 1MHz 1A Military MIL-PRF-19500/586 Surface Mount DO-213AB (MELF, LL41) -65°C ~ 125°C
1N5819-1/TR

1N5819-1/TR

DIODE SCHOTTKY 45V 1A DO204AL

Microchip Technology

4,148 -
1N5819-1/TR

数据表

- DO-204AL, DO-41, Axial Tape & Reel (TR) Active Schottky 45 V 340 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V 70pF @ 5V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 125°C
1N5819-1E3

1N5819-1E3

DIODE SCHOTTKY 45V 1A DO41

Microchip Technology

5,881 -
1N5819-1E3

数据表

- DO-204AL, DO-41, Axial Bulk Active Schottky 45 V 490 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V 70pF @ 5V, 1MHz 1A - - Through Hole DO-41 -65°C ~ 125°C
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