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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTX1N5616US/TRDIODE GEN PURP 400V 1A D-5A Microchip Technology |
9,560 | - |
|
数据表 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 400 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 400 V | - | 1A | Military | MIL-PRF-19500/427 | Surface Mount | D-5A | -65°C ~ 200°C |
|
JAN1N5186/TRDIODE GEN PURP 100V 3A B AXIAL Microchip Technology |
3,125 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 100 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 2 µA @ 100 V | - | 3A | Military | MIL-PRF-19500/424 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JAN1N5187DIODE GEN PURP 200V 3A AXIAL Microchip Technology |
8,944 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 200 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 2 µA @ 200 V | - | 3A | Military | MIL-PRF-19500/424 | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
1N5551USE3/TRDIODE GEN PURP 400V 3A B SQ-MELF Microchip Technology |
9,349 | - |
|
数据表 |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 400 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 400 V | - | 3A | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
|
1N6638UDIODE GEN PURP 125V 300MA D-5B Microchip Technology |
8,960 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Active | Standard | 125 V | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4.5 ns | 500 nA @ 150 V | 2.5pF @ 0V, 1MHz | 300mA | - | - | Surface Mount | D-5B | -65°C ~ 175°C |
|
|
JAN1N5623/TRDIODE GEN PURP 1KV 1A Microchip Technology |
2,450 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 1000 V | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 500 nA @ 1 V | - | 1A | Military | MIL-PRF-19500/429 | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
JANTX1N5553DIODE GEN PURP 800V 5A AXIAL Microchip Technology |
91 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 800 V | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 800 V | - | 5A | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
|
APT100D60B2GDIODE GEN PURP 600V 100A TO247 Microchip Technology |
46 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | Standard | 600 V | - | - | - | - | - | 100A | - | - | Through Hole | TO-247 | - |
|
|
JANTX1N5553/TRDIODE GEN PURP 800V 5A Microchip Technology |
9,476 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 800 V | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 800 V | - | 5A | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTXV1N5618DIODE GEN PURP 600V 1A AXIAL Microchip Technology |
2,822 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 600 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 600 V | - | 1A | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |
