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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTXV1N4245DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
7,684 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 200 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 200 V | - | 1A | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
|
1N6642DIODE GEN PURPOSE Microchip Technology |
3,955 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 75 V | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 500 nA @ 75 V | 5pF @ 0V, 1MHz | 300mA | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
1N5553/TRSTD RECTIFIER Microchip Technology |
2,724 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 800 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 800 V | - | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N6620DIODE GEN PURP 220V 1.2A AXIAL Microchip Technology |
6,622 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 220 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 220 V | 10pF @ 10V, 1MHz | 1.2A | - | - | Through Hole | A, Axial | -65°C ~ 150°C |
|
JAN1N5617USDIODE GEN PURP 400V 1A D-5A Microchip Technology |
8,424 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 400 V | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 400 V | - | 1A | Military | MIL-PRF-19500/429 | Surface Mount | D-5A | -65°C ~ 175°C |
|
JANTXV1N5618/TRDIODE GEN PURP 600V 1A Microchip Technology |
2,472 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 600 V | - | 1A | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |
|
|
JAN1N5187/TRDIODE GEN PURP 200V 3A AXIAL Microchip Technology |
2,112 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 200 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 2 µA @ 200 V | - | 3A | Military | MIL-PRF-19500/424 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTXV1N4249DIODE GEN PURP 1KV 1A AXIAL Microchip Technology |
5,395 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 1000 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 1000 V | - | 1A | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
|
1N5819-1DIODE SCHOTTKY 45V 1A DO204AL Microchip Technology |
5,535 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Bulk | Active | Schottky | 45 V | 340 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | 70pF @ 5V, 1MHz | 1A | - | - | Through Hole | DO-204AL (DO-41) | -65°C ~ 125°C |
|
1N5819DIODE SCHOTTKY 45V 1A DO41 Microchip Technology |
9,493 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Bulk | Active | Schottky | 45 V | 490 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | 70pF @ 5V, 1MHz | 1A | - | - | Through Hole | DO-204AL (DO-41) | -65°C ~ 125°C |
