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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5819GDIODE SCHOTTKY 40V 1A DO41 Microchip Technology |
4,858 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Bulk | Active | Schottky | 40 V | 600 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 40 V | - | 1A | - | - | Through Hole | DO-204AL (DO-41) | -65°C ~ 150°C |
|
1N6638US/TRDIODE GEN PURP 125V 300MA D-5D Microchip Technology |
3,027 | - |
|
数据表 |
- | SQ-MELF, D | Tape & Reel (TR) | Active | Standard | 125 V | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 500 nA @ 125 V | 2.5pF @ 0V, 1MHz | 300mA | - | - | Surface Mount | D-5D | -65°C ~ 175°C |
|
1N6638U/TRDIODE GEN PURP 125V 300MA D-5B Microchip Technology |
3,656 | - |
|
数据表 |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 125 V | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4.5 ns | 500 nA @ 150 V | 2.5pF @ 0V, 1MHz | 300mA | - | - | Surface Mount | D-5B | -65°C ~ 175°C |
|
JANTX1N5819-1DIODE SCHOTTKY 45V 1A DO204AL Microchip Technology |
7,200 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Bulk | Active | Schottky | 45 V | 600 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 45 V | 70pF @ 5V, 1MHz | 1A | Military | MIL-PRF-19500/586 | Through Hole | DO-204AL (DO-41) | -65°C ~ 125°C |
|
JANTXV1N5620DIODE GEN PURP 800V 1A Microchip Technology |
7,032 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 800 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 800 V | - | 1A | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |
|
MSC020SDA120BDIODE SIL CARB 1.2KV 49A TO247 Microchip Technology |
37 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1130pF @ 1V, 1MHz | 49A | - | - | Through Hole | TO-247 | -55°C ~ 175°C |
|
|
MSC050SDA070BDIODE SIL CARBIDE 700V 50A TO247 Microchip Technology |
59 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 700 V | 1.5 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | - | - | 50A | - | - | Through Hole | TO-247 | - |
|
|
1N6621USDIODE GEN PURP 440V 1.2A A-MELF Microchip Technology |
38 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 440 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 440 V | 10pF @ 10V, 1MHz | 1.2A | - | - | Surface Mount | A-MELF | -65°C ~ 150°C |
|
JANTXV1N4245/TRDIODE GEN PURP 200V 1A Microchip Technology |
3,562 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 200 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 200 V | - | 1A | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
|
MSC030SDA120BCTDIODE SIL CARB 1.2KV 65A TO247-3 Microchip Technology |
24 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 141pF @ 400V, 1MHz | 65A | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
