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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIDC09D60E6X1SA1DIODE GP 600V 20A WAFER Infineon Technologies |
9,064 | - |
|
数据表 |
- | Die | Bulk | Obsolete | Standard | 600 V | 1.7 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 27 µA @ 600 V | - | 20A | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
|
|
SIDC09D60F6X1SA2DIODE GP 600V 30A WAFER Infineon Technologies |
8,573 | - |
|
数据表 |
- | Die | Bulk | Obsolete | Standard | 600 V | 1.6 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | 30A | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
|
|
SIDC14D120E6X1SA4DIODE GP 1.2KV 15A WAFER Infineon Technologies |
5,673 | - |
|
数据表 |
- | Die | Bulk | Discontinued at Digi-Key | Standard | 1200 V | 1.9 V @ 15 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | 15A | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
|
|
SIDC14D60E6X1SA1DIODE GP 600V 30A WAFER Infineon Technologies |
8,648 | - |
|
数据表 |
- | Die | Bulk | Obsolete | Standard | 600 V | 1.25 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | 30A | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
|
IDW100E60FKSA1DIODE GP 600V 150A TO247-3-1 Infineon Technologies |
388 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | Standard | 600 V | 2 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 120 ns | 40 µA @ 600 V | - | 150A | - | - | Through Hole | PG-TO247-3-1 | -55°C ~ 175°C |
|
|
SIDC14D60F6X1SA2DIODE GP 600V 45A WAFER Infineon Technologies |
8,220 | - |
|
数据表 |
- | Die | Bulk | Obsolete | Standard | 600 V | 1.6 V @ 45 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | 45A | - | - | Surface Mount | Sawn on foil | -40°C ~ 150°C |
|
|
SIDC23D60E6X1SA4DIODE GP 600V 50A WAFER Infineon Technologies |
5,159 | - |
|
数据表 |
- | Die | Bulk | Obsolete | Standard | 600 V | 1.25 V @ 50 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | 50A | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
|
|
SIDC42D60E6X1SA1DIODE GP 600V 100A WAFER Infineon Technologies |
7,132 | - |
|
数据表 |
- | Die | Bulk | Obsolete | Standard | 600 V | 1.25 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | 100A | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
|
|
SIDC56D60E6X1SA1DIODE GP 600V 150A WAFER Infineon Technologies |
2,187 | - |
|
数据表 |
- | Die | Bulk | Obsolete | Standard | 600 V | 1.25 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | 150A | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
|
IDK08G120C5XTMA1DIODE SIC 1.2KV 22.8A TO263-1 Infineon Technologies |
373 | - |
|
数据表 |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.95 V @ 8 A | No Recovery Time > 500mA (Io) | - | 40 µA @ 1200 V | 365pF @ 1V, 1MHz | 22.8A | - | - | Surface Mount | PG-TO263-2-1 | -55°C ~ 175°C |
