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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
D1461S45TXPSA1

D1461S45TXPSA1

DIODE GEN PURP 1720A D10026K-1

Infineon Technologies

3,036 -
D1461S45TXPSA1

数据表

- DO-200, Variant Tray Active Standard - - Standard Recovery >500ns, > 200mA (Io) - 200 mA @ 4500 V - 1720A - - Chassis Mount BG-D10026K-1 -40°C ~ 140°C
D3041N65TXPSA1

D3041N65TXPSA1

DIODE GEN PURP 6.5KV 4090A

Infineon Technologies

4,966 -
D3041N65TXPSA1

数据表

- DO-200AE Tray Active Standard 6500 V 1.7 V @ 4000 A Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 6500 V - 4090A - - Chassis Mount - -40°C ~ 160°C
D3001N68TXPSA1

D3001N68TXPSA1

DIODE GEN PURP 6.8KV 3910A

Infineon Technologies

3,717 -
D3001N68TXPSA1

数据表

- DO-200AE Tray Active Standard 6800 V 1.7 V @ 4000 A Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 6800 V - 3910A - - Chassis Mount - -40°C ~ 160°C
D2601N85TXPSA1

D2601N85TXPSA1

DIODE GEN PURP 8.5KV 3040A

Infineon Technologies

7,416 -
D2601N85TXPSA1

数据表

- DO-200AE Tray Active Standard 8500 V - Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 8500 V - 3040A - - Chassis Mount - -40°C ~ 160°C
D2601N90TXPSA1

D2601N90TXPSA1

DIODE GEN PURP 9KV 3040A

Infineon Technologies

7,931 -
D2601N90TXPSA1

数据表

- DO-200AE Tray Active Standard 9000 V - Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 9000 V - 3040A - - Chassis Mount - -40°C ~ 160°C
D3501N42TVFXPSA1

D3501N42TVFXPSA1

DIODE GP 4.2KV 4870A D12035K-1

Infineon Technologies

7,405 -
D3501N42TVFXPSA1

数据表

- DO-200AE Tray Active Standard 4200 V - Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 4200 V - 4870A - - Chassis Mount BG-D12035K-1 160°C (Max)
D1961SH45TXPSA1

D1961SH45TXPSA1

DIODE GEN PURP 4.5KV 2380A

Infineon Technologies

3,234 -
D1961SH45TXPSA1

数据表

- DO-200AE Tray Active Standard 4500 V 2.5 V @ 2500 A Standard Recovery >500ns, > 200mA (Io) - 150 mA @ 4500 V - 2380A - - Chassis Mount - 0°C ~ 140°C
D1721NH90TAOSA1

D1721NH90TAOSA1

DIODE GEN PURP 2160A D10026K-1

Infineon Technologies

4,076 -
D1721NH90TAOSA1

数据表

- DO-200, Variant Tray Not For New Designs Standard - - Standard Recovery >500ns, > 200mA (Io) - 150 mA @ 9000 V - 2160A - - Chassis Mount BG-D10026K-1 0°C ~ 140°C
D6001N50TXPSA1

D6001N50TXPSA1

DIODE GEN PURP 5KV 8010A

Infineon Technologies

2,515 -
D6001N50TXPSA1

数据表

- DO-200AE Tray Active Standard 5000 V 1.3 V @ 6000 A Standard Recovery >500ns, > 200mA (Io) - 400 mA @ 5000 V - 8010A - - Chassis Mount - -40°C ~ 160°C
BAW78DE6327HTSA1

BAW78DE6327HTSA1

DIODE GEN PURP 400V 1A SOT89

Infineon Technologies

8,545 -
BAW78DE6327HTSA1

数据表

- TO-243AA Tape & Reel (TR) Obsolete Standard 400 V 1.6 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 1 µs 1 µA @ 400 V 10pF @ 0V, 1MHz 1A - - Surface Mount PG-SOT89 150°C (Max)
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